마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제30권4호
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  • Pages.98-104
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  • 2023
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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황동층의 형성과 선택적 아연 에칭을 통한 구리 필라 상 다공성 구리층의 제조와 구리-구리 플립칩 접합

Fabrication of Porous Cu Layers on Cu Pillars through Formation of Brass Layers and Selective Zn Etching, and Cu-to-Cu Flip-chip Bonding

  • 이완근 (서울과학기술대학교 신소재공학과) ;
  • 최광성 (전자통신연구원 저탄소집적기술 창의연구실) ;
  • 엄용성 (전자통신연구원 저탄소집적기술 창의연구실) ;
  • 이종현 (서울과학기술대학교 신소재공학과)
  • Wan-Geun Lee (Department of Materials Science & Engineering, Seoul National University of Science and Technology) ;
  • Kwang-Seong Choi (Low-Carbon Integration Tech, Creative Research Section, ETRI) ;
  • Yong-Sung Eom (Low-Carbon Integration Tech, Creative Research Section, ETRI) ;
  • Jong-Hyun Lee (Department of Materials Science & Engineering, Seoul National University of Science and Technology)
  • 투고 : 2023.12.22
  • 심사 : 2023.12.30
  • 발행 : 2023.12.30
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초록

대기 중 구리-구리 플립칩(flip-chip) 접합을 위해 제안된 효율적 공정의 실현 가능성을 평가하고자 구리(Cu) 필라(pillar) 상 다공성 구리층의 형성 및 액상 환원제 투입 후 열압착 접합을 실시하였다. 구리 필라 상 다공성 구리층은 아연(Zn) 도금-합금화 열처리-선택적 아연 에칭(etching)의 3단계 공정으로 제조되었는데, 형성된 다공성 구리층의 두께는 평균 약 2.3 ㎛였다. 본 플립칩 접합은 형성 다공성 구리층에 환원성 용제를 침투시킨 후, 반건조 과정을 거쳐 열압착 소결접합으로 진행하였다. 용제로 인한 구리 산화막의 환원 거동과 함께 추가 산화가 최대한 억제되면서 열압착 동안 다공성 구리층은 약 1.1 ㎛의 두께로 치밀해지며 결국 구리-구리 플립칩 접합이 완수되었다. 그 결과 10 MPa의 가압력 하에서 대기 중 300 ℃에서 5분간 접합 시 약 11.2 MPa의 접합부 전단강도를 확보할 수 있었는데, 이는 약 50% 이하의 필라들만이 접합된 결과로서, 공정 최적화를 통해 모든 필라들의 접합을 유도할 경우 20 MPa 이상의 강도값을 쉽게 얻을 수 있을 것으로 분석되었다.

The feasibility of an efficient process proposed for Cu-Cu flip-chip bonding was evaluated by forming a porous Cu layer on Cu pillar and conducting thermo-compression sinter-bonding after the infiltration of a reducing agent. The porous Cu layers on Cu pillars were manufactured through a three-step process of Zn plating-heat treatment-Zn selective etching. The average thickness of the formed porous Cu layer was approximately 2.3 ㎛. The flip-chip bonding was accomplished after infiltrating reducing solvent into porous Cu layer and pre-heating, and the layers were finally conducted into sintered joints through thermo-compression. With reduction behavior of Cu oxides and suppression of additional oxidation by the solvent, the porous Cu layer densified to thickness of approximately 1.1 ㎛ during the thermo-compression, and the Cu-Cu flip-chip bonding was eventually completed. As a result, a shear strength of approximately 11.2 MPa could be achieved after the bonding for 5 min under a pressure of 10 MPa at 300 ℃ in air. Because that was a result of partial bonding by only about 50% of the pillars, it was anticipated that a shear strength of 20 MPa or more could easily be obtained if all the pillars were induced to bond through process optimization.

키워드

과제정보

본논문은과학기술정보통신부의재원으로한국연구재단의 지원(No. 2020M3H4A308176)을 받아 수행된 연구임.

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