과제정보
This work was supported by Tianjin postgraduate research and innovation project 2020 (2020YJSB007). Thank Ahian-dipe Boris very much for helping us correct the language mistakes and flaws in the paper.
참고문헌
- He, X.N., Wang, R.C., Wu, J.D., et al.: Info character of power electronic conversion and control with power discretization to digitization then intelligentization. Proc. CSEE 40(5), 1579-1587 (2020)
- Chen, X.X., Liu, J.J., Deng, Z.F., et al.: A diagnosis strategy for multiple IGBT open-circuit faults of modular multilevel converters. IEEE Trans. Power Elec. 36(1), 191-203 (2021) https://doi.org/10.1109/TPEL.2020.2997963
- Hakim, T., Cherifa, T., Mohamed, B., et al.: Experimental investigation of NBTI degradation in power VDMOS transistors under low magnetic field. IEEE Trans. Devi. Mater. Reliab. 17(1), 99-105 (2017) https://doi.org/10.1109/TDMR.2017.2666260
- Ninoslav, S., Danijel, D., Ivica, M., et al.: Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs. In: 2007 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (2007)
- Snezana, M.D., Ivica, D., et al.: Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs. Nuclear Tech. Rad. Prot. 26(1), 18-24 (2011) https://doi.org/10.2298/NTRP1101018D
- Dupont, L., Avenas, Y., Jeannin, P.: Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters. IEEE Trans. Ind. Appl. 49(4), 1599-1608 (2013) https://doi.org/10.1109/TIA.2013.2255852
- Yang, S.Y., Xiang, D.W., Bryant, A., et al.: Condition monitoring for device reliability in power electronic converters: a review. IEEE Trans. Power Electon. 25(11), 2734-2752 (2011)
- Yang, S.Y., Bryant, A., Mawby, P., et al.: An industry-based survey of reliability in power electronic converters. IEEE Trans. Ind. Appl. 47(3), 1441-1451 (2011) https://doi.org/10.1109/TIA.2011.2124436
- Fabis, P.M., Shum, D., Windischmann, H.: Thermal modeling of diamond-based power electronics packaging. In: Fifteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (1999)
- Chen, Y., Lei, G.Y., Lu, G.Q., et al.: "High-temperature characterizations of a half-Bridge wire-bondless SiC MOSFET module. IEEE J. Electron Dev. Soc. 9, 966-971 (2021) https://doi.org/10.1109/JEDS.2021.3119428
- Li, J.M., Zhou, Y.G., Qi, Y.D., et al.: In-situ measurement of junction temperature and light intensity of light emitting diodes with an internal sensor unit. IEEE Electron Dev. Lett. 36(10), 1082-1084 (2015) https://doi.org/10.1109/LED.2015.2471801
- Soldati, A., Delmonte, N., Cova, P., et al.: Device-sensor assembly FEA modeling to support kalman-filter-based junction temperature monitoring. IEEE J. Emerg. Select. Top. Power Electron. 7(3), 1736-1747 (2019) https://doi.org/10.1109/JESTPE.2019.2922939
- Baker, N., Dupont, L., Nielsen, S.M., et al.: IR camera validation of IGBT junction temperature measurement via peak gate current. IEEE Trans. Power Electron 32(4), 3099-3111 (2017) https://doi.org/10.1109/TPEL.2016.2573761
- Eleffendi, M.A., Johnson, M.: Application of kalman filter to estimate junction temperature in IGBT power modules. IEEE Trans. Power Electron 31(2), 1576-1587 (2016) https://doi.org/10.1109/TPEL.2015.2418711
- Hu, Z., Du, M.X., Wei, K.X., et al.: An adaptive thermal equivalent circuit model for estimating the junction temperature of IGBTs. IEEE J. Emerg. Select. Top. Power Electron. 7(1), 392- 403 (2019) https://doi.org/10.1109/JESTPE.2018.2796624
- Avenas, Y., Dupont, L., Khatir, Z.: Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters: a review. IEEE Trans. Power Electron 27(6), 3081- 3092 (2012) https://doi.org/10.1109/TPEL.2011.2178433
- Chen, M., Hu, A., Tang, Y., et al.: Modeling analysis of IGBT thermal model. High Volt. Eng. 37(2), 453-459 (2011)
- Sun, P., Zhao, Z., Cai, Y., et al.: Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal-oxide-semiconductor fieldeffect transistor modules. IET Power Electron. 13(3), 436-444 (2020) https://doi.org/10.1049/iet-pel.2019.0588
- Liu, J.C., Zhang, G.G., Chen, Q., et al.: In situ condition monitoring of IGBTs based on the miller plateau duration. IEEE Trans. Power Electron. 34(1), 769-782 (2019)
- Bryant, A., Yang, S.Y., Mawby, P.: Investigation into IGBT dV/ dt during turn-off and its temperature dependence. IEEE Trans. Power Electron. 26(10), 3019-3031 (2011) https://doi.org/10.1109/TPEL.2011.2125803
- Xu, Z.X., Xu, F., Wang, F.: Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation. IEEE Trans. Ind. Electron. 62(6), 3419-3429 (2015) https://doi.org/10.1109/TED.2015.2470118
- Luo, H.Z., Chen, Y.X., Sun, P.F., et al.: Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules. IEEE Trans. Power Electron. 31(7), 5122-5132 (2016)
- Zeng, G., Cao, H., Chen, W., et al.: Difference in device temperature determination using p-n-junction forward voltage and gate threshold voltage. IEEE Trans. Power Electron. 34(3), 2781-2793 (2019) https://doi.org/10.1109/TPEL.2018.2842459
- Baker, N., Iannuzzo, F.: The temperature dependence of the flatband voltage in high power IGBTs. IEEE Trans. Ind. Electron. 66(7), 5581-5584 (2019) https://doi.org/10.1109/TIE.2018.2854568
- Baker, N., Munk-Nielsen, S., Iannuzzo, F., et al.: IGBT junction temperature measurement via peak gate current. IEEE Trans. Power Electron. 31(5), 3784-3793 (2016) https://doi.org/10.1109/TPEL.2015.2464714
- Peralta, J., Saad, H., Dennetiere, S., et al.: Detailed and averaged models for a 401-Level MMC-HVDC system. IEEE Trans. Power Del. 27(3), 1501-1508 (2012) https://doi.org/10.1109/TPWRD.2012.2188911
- Hu, B.R., Hu, Z.D., Ran, L., et al.: Heat-flux-based condition monitoring of multichip power modules using a two-stage neural network. IEEE Trans. Power Electron. 36(7), 7489-7500 (2021) https://doi.org/10.1109/TPEL.2020.3045604
- Guo, Y.X., Wang, X.M., Zhang, B.: Improved IGBT module junction- temperature extraction algorithm and experiment. J. Power Supply 19(1), 205-214 (2021)
- Lai, W., Chen, M.Y., Ran, L., et al.: Small junction temperature cycles on die-attach solder layer in IGBT. In: 2015 17th European Conference on Power Electronics and Applications (2015)
- Yang, J.X., Che, Y.B., Ran, L., et al.: Evaluation of frequency and temperature dependence of power losses difference in parallel IGBTs. IEEE Access 8, 104074-104084 (2020) https://doi.org/10.1109/ACCESS.2020.2995971