Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Resistive Switching Properties of N and F co-doped ZnO

  • Kim, Minjae (Department of Materials Science and Engineering, Yonsei University) ;
  • Kang, Kyung-Mun (Department of Materials Science and Engineering, Yonsei University) ;
  • Wang, Yue (Department of Materials Science and Engineering, Yonsei University) ;
  • Chabungbam, Akendra Singh (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Dong-eun (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Hyung Nam (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University)
  • Received : 2022.05.17
  • Accepted : 2022.06.30
  • Published : 2022.06.30
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Abstract

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

Keywords

Acknowledgement

This material is based upon work supported by the National Research Foundation of Korea funded by the Korea government (MSIT) (grant 2019R1A2C2087604). Experiments at PLS were supported in part by MEST and POSTECH.

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