전기전자학회논문지 (Journal of IKEEE)

  • 제26권2호
  • /
  • Pages.196-204
  • /
  • 2022
  • /
  • 1226-7244(pISSN)
  • /
  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
권호 표지
DOI QR코드

DOI QR Code

Simulation-based P-well design for improvement of ESD protection performance of P-type embedded SCR device

  • 투고 : 2022.04.29
  • 심사 : 2022.06.15
  • 발행 : 2022.06.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N+ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

키워드

과제정보

This work was supported by the Seahn university research fund in 2022.

참고문헌

  1. Y. J. Seo and K. H. Kim, "Effects of background doping concentration on electrostatic discharge protection of high voltage operating extended drain N-type MOS device," Microelectronic Engineering, Vol.84, No.1, pp.161-164, 2007. DOI: 10.1016/j.mee.2006.09.030
  2. Y. J. Seo and K. H. Kim, "Characteristics of an extended drain N-type MOS device for electrostatic discharge protection of a LCD driver chip operating at high voltage," J. Korean Phys. Soc., Vol.50, No.3, pp.897-901, 2007. DOI: 10.3938/jkps.50.897
  3. M. D. Ker, H. H. Chang, and C. Y. Wu, "A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS IC's," IEEE J. Solid-State Circuits, Vol.32, No.1, pp.38-51, 1997. DOI: 10.1109/4.553176
  4. C. H. Lai, M. H. Liu, S. Su, T. C. Lu, and S. Pan, "A novel gate-coupled SCR ESD protection structure with high latch-up immunity for high-speed I/O pad," IEEE Electron Dev. Lett., Vol.25, No.5, pp.328-330, 2004. DOI: 10.1109/LED.2004.826529
  5. M. Mergens, C. Russ, K. Verhaege, J. Armer, P. Jozwiak, and R. Mohn, "High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation," Microelectronics Reliability, Vol.43, No.7, pp.993-1000, 2003. DOI: 10.1016/S0026-2714(03)00125-2
  6. A. Guilhaume, P. Galy, J. P. Chante, B. Foucher, S. Bardy, and F. Blanc, "ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test," Journal of Electrostatics, Vol.56, No.3, pp.281-294, 2002. DOI: 10.1016/S0304-3886(02)00092-X
  7. Y. J. Seo and K. H. Kim, "N-type extended drain silicon-controlled rectifier electrostatic discharge protection device for high-voltage operating input/output applications," Japanese J. Appl. Phys., Vol.46, No.4B, pp.2101-2106, 2007. DOI: 10.1143/JJAP.46.2101