한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제32권3호
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  • Pages.83-88
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  • 2022
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과

Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN

  • 이승훈 (한양대학교 세라믹연구소) ;
  • 이주형 (한양대학교 신소재공학과) ;
  • 오누리 (한양대학교 신소재공학과) ;
  • 이성철 (한양대학교 세라믹연구소) ;
  • 박형빈 (에임즈마이크론(주)) ;
  • 신란희 (에임즈마이크론(주)) ;
  • 박재화 (에임즈마이크론(주))
  • 투고 : 2022.05.31
  • 심사 : 2022.06.09
  • 발행 : 2022.06.30
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초록

이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.

To improve the crystallinity of GaN, there are researches on surface treatment to control the difference in physical properties between GaN and heterogeneous substrate. 'Low-temperature GaN (LT-GaN)' is one of the ways to solve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in our homemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures and they presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stress relaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the high crystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed of polycrystalline.

키워드

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