Structural Engineering and Mechanics

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Analysis of photothermal response in a two-dimensional semiconducting material thermally excited by pulse heat flux

  • Saeed, Tareq (Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Mathematics Department, King Abdulaziz University) ;
  • Abbas, Ibrahim (Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Mathematics Department, King Abdulaziz University)
  • Received : 2021.04.15
  • Accepted : 2022.02.11
  • Published : 2022.05.25
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Abstract

A mathematical model of Lord-Shulman photo-thermal theorem induced by pulse heat flux is presented to study the propagations waves for plasma, thermal and elastic in two-dimensional semiconductor materials. The medium is assumed initially quiescent. By using Laplace-Fourier transforms with the eigenvalue method, the variables are obtained analytically. A semiconductor medium such as silicon is investigated. The displacements, stresses, the carrier density and temperature distributions are calculated numerically and clarified graphically. The outcomes show that thermal relaxation time has varying degrees of effects on the studying fields.

Keywords

Acknowledgement

This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under grant No (DF-786-130-1441). The authors, therefore, gratefully acknowledge the DSR technical and financial support.

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