Effect of Substrate Temperature and Hydrogen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films

기판온도 및 수소 분위기 가스에 따른 IGZO 투명전도성박막의 구조적 및 전기적 특성

  • Bae, Jang Ho (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
  • 배장호 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공)
  • Received : 2022.01.21
  • Accepted : 2022.03.25
  • Published : 2022.03.31

Abstract

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

Keywords

Acknowledgement

본 논문은 교육부의 재원으로 한국연구재단의 BK21 FOUR 사업, 2020학년도 한국기술교육대학교 교수교육연구진흥과제 및 2021년도 교육부의 재원으로 한국연구재단의 지원을 받아 수행된 지자체-대학 협력기반 지역혁신 사업.(2021RIS-004)의 결과입니다.

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