Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Junction temperature measurement method for IGBTs using turn-on miller plateau duration

  • Received : 2021.03.21
  • Accepted : 2021.06.03
  • Published : 2021.09.20
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Abstract

A new method is proposed for the measurement of the junction temperature of insulated gate bipolar transistors (IGBTs) during operation. The application of this method overcomes the problems arising from the complexity of measurement circuits or the difficulty of tests. The proposed measurement method uses the turn-on Miller plateau duration (tmon), i.e., the duration from the first rising edge to the second rising edge of the gate-emitter voltage, of an IGBT. The obtained results show that tmon is strongly linear with respect to temperature. For comparison, the temperature-sensitive electrical parameters (TSEPs) turn-off Miller plateau duration (i.e., the duration between the two falling edges of the Vge-off curve) were also measured. The obtained results show that tmon exhibits a high sensitivity that permits accurate determination of the junction temperatures of IGBTs.

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References

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