접착 및 계면 (Journal of Adhesion and Interface)

  • 제22권3호
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  • Pages.91-97
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  • 2021
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  • 1229-9243(pISSN)
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  • 2233-8217(eISSN)
한국접착및계면학회 (The Society of Adhesion and Interface, Korea)
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Parylene 고분자 유전체 표면제어를 통한 OFET의 소자 안정성 향상 연구

Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics

  • 서정윤 (한양대학교 재료화학공학과) ;
  • 오승택 (한양대학교 재료화학공학과) ;
  • 최기헌 (한양대학교 재료화학공학과) ;
  • 이화성 (한양대학교 재료화학공학과)
  • Seo, Jungyoon (Department of Materials Science and Chemical Engineering, Hanyang University) ;
  • Oh, Seungteak (Department of Materials Science and Chemical Engineering, Hanyang University) ;
  • Choi, Giheon (Department of Materials Science and Chemical Engineering, Hanyang University) ;
  • Lee, Hwasung (Department of Materials Science and Chemical Engineering, Hanyang University)
  • 투고 : 2021.05.31
  • 심사 : 2021.07.26
  • 발행 : 2021.09.30
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⟨ 이전 논문 다음 논문 ⟩

초록

본 연구는 Parylene C 유전체 표면에 유기 자기조립단분자막(self-assembled monolayer, SAM) 중간층을 도입함으로써 표면특성을 제어하고 최종적으로 유기전계효과 트랜지스터(organic field-effect transistors, OFETs)의 전기적 안정성을 향상시킨 결과를 제시하였다. 유기 중간층을 적용함으로써, Parylene C 게이트 유전체의 표면 에너지를 제어하였으며, OFET의 가장 중요한 성능변수인 전계효과 이동도(field-effect transistor, μFET)와 문턱 전압 (threshold voltage, Vth)의 성능향상과 구동 안정성을 증대시켰다. 단순히 Parylene C 유전체를 적용한 Bare OFET에서 μFET 값은 0.12 cm2V-1s-1가 측정되었으나, hexamethyldisilazane (HMDS)과 octadecyltrichlorosilane (ODTS)를 중간층으로 적용된 소자에서는 각각 0.32과 0.34 cm2V-1s-1로 μFET가 증가하였다. 또한 1000번의 transfer 특성의 반복측정을 통해 ODTS 처리한 OFET의 μFET와 Vth의 변화가 가장 작게 나타남을 확인하였다. 이 연구를 통해 유기 SAM 중간층, 특히 ODTS는 효과적으로 Parylene C 표면을 알킬 사슬로 덮어 극성도를 낮춤과 함께 전하 트래핑을 감소시켜 소자의 전기적 구동 안정성을 증가시킬 수 있음을 확인하였다.

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μFET) and threshold voltage (Vth) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm2V-1s-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μFET values of 0.32 and 0.34 cm2V-1s-1, respectively. More important point is that the μFET and Vth of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

키워드

과제정보

본 연구는 이 연구는 2021년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원에 의해 진행한 연구결과입니다(과제번호: 20010915).

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