Acknowledgement
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1B07050432).
References
- A. Moezzi, A. M. McDonagh and M. B. Cortie, Chem. Eng. J., 185-186, 1 (2012). https://doi.org/10.1016/j.cej.2012.01.076
- Z. L. Wang, J. Phys.: Condens. Matter, 16, R829 (2004). https://doi.org/10.1088/0953-8984/16/25/R01
- K.-R. Agnieszka and T. Jesionowski, Materials, 7, 2833 (2014). https://doi.org/10.3390/ma7042833
- J. Wang, J. S. Lee, D. Kim and L. Zhu, ACS Appl. Mater. Interfaces, 9, 39971 (2017). https://doi.org/10.1021/acsami.7b11219
- M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo and P. D. Yang, Science, 292, 1897 (2001). https://doi.org/10.1126/science.1060367
- Z. Y. Fan and J. G. Lu, Appl. Phys. Lett., 86, 032111 (2005). https://doi.org/10.1063/1.1851621
- X. W. Li, P. Sun, T. L. Yang, J. Zhao, Z. Wang, W. Wang, Y. Liu, G. Lu and Y. Du, CrystEngComm, 15, 2949 (2013). https://doi.org/10.1039/c2ce26539g
- M. L. M. Napi, S. M. Sultan, R. Ismail, K. W. How and M. K. Ahmad, Materials, 12, 2985 (2019). https://doi.org/10.3390/ma12182985
- Y. H. Lv, C. S. Pan, X. G. Ma, R. L. Zong, X. J. Bai and Y. F. Zhu, Appl. Catal., B, 138-139, 26 (2013). https://doi.org/10.1016/j.apcatb.2013.02.011
- L. Wei, X. B Zhang and Z. Zuoya, J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom., 25, 608 (2007). https://doi.org/10.1116/1.2711818
- V. Kumar, N. Singh, V. Kumar, L. P. Purohit, A. Kapoor, O. M. Ntwaeaborwa and H. C. Swart, J. Appl. Phys., 114, 134506 (2013). https://doi.org/10.1063/1.4824363
- Q. F. Zhou, C. Sharp, J. M. Cannata, K. K. Shung, G. H. Feng and E. S. Kim, Appl. Phys. Lett., 90, 113502 (2007). https://doi.org/10.1063/1.2712813
- D. Panda and T. Y. Tseng, J. Mater. Sci., 48, 6849 (2013). https://doi.org/10.1007/s10853-013-7541-0
- Z. Fan and J. G. Lu, J. Nanosci. Nanotechnol., 5, 1561 (2005). https://doi.org/10.1166/jnn.2005.182
- Y. B. Hahn, Korean J. Chem. Eng., 28, 1797 (2011). https://doi.org/10.1007/s11814-011-0213-3
- J. Theerthagiri, S. Salla, R. A. Senthil, P. Nithyadharseni, A. Madankumar, P. Arunachalam, T. Maiyalagan and H.-S. Kim, Nanotechnology, 30, 392001 (2019). https://doi.org/10.1088/1361-6528/ab268a
- M. A. Borysiewicz, Crystals, 9, 505 (2019). https://doi.org/10.3390/cryst9100505
- J. Wojnarowicz, T. Chudoba and W. Lojkowski, Nanomaterials, 10, 1086 (2020). https://doi.org/10.3390/nano10061086
- B. D. Yao, Y. F. Chan and N. Wang, Appl. Phys. Lett., 81, 757 (2002). https://doi.org/10.1063/1.1495878
- J. J. Wu and S. C. Liu, Adv. Mater., 14, 215 (2002). https://doi.org/10.1002/1521-4095(20020205)14:3<215::AID-ADMA215>3.0.CO;2-J
- J. Lee, A. J. Easteal, U. Pal and U. Bhattacharyya, Curr. Appl. Phys., 4, 792 (2009).
- M. A. Mousa, W. A. A. Bayoumy and M. Khairy, Mater. Res. Bull., 48, 4576 (2013). https://doi.org/10.1016/j.materresbull.2013.07.050
- D. Raoufi, Renew. Energ., 50, 932 (2013). https://doi.org/10.1016/j.renene.2012.08.076
- Y. Fang, Z. Li, S. Xu, D. Han and D. Lu, J. Alloys Compd., 575, 359 (2013). https://doi.org/10.1016/j.jallcom.2013.05.183
- T. Ipeksac, F. Kaya and C. Kaya, Mater. Lett., 100, 11 (2013). https://doi.org/10.1016/j.matlet.2013.02.099
- J. H. Ryu, H. S. Kil, J. H. Song, D. Y. Lim and S. B. Cho, Powder Technol., 221, 228 (2012). https://doi.org/10.1016/j.powtec.2012.01.006
- K. Phimmavong, J. H. Song, S. B. Cho and D. Y. Lim, J. Korean Ceram. Soc., 54, 211 (2017). https://doi.org/10.4191/kcers.2017.54.3.03
- M. T. Thein, S. Y. Pung, A. Aziz and M. Itoh, J. Exp. Nanosci., 10, 1068 (2015). https://doi.org/10.1080/17458080.2014.953609
- B. D. Cullity and S. R. Stock, Elements of X-Ray Diffraction, 3rd ed., p.167-171, Prentice-Hall Inc., Upper Saddle River, New Jersey, USA (2001).
- S. Nilavazhagan, D. Anbuselvan, A. Santhanam and N. Chidhambaram, Appl. Phys. A: Mater. Sci. Process., 126, 279 (2020). https://doi.org/10.1007/s00339-020-3462-3
- W.-J. Li, E.-W. Shi, W.-Z. Zhong and Z.-W. Yin, J. Cryst. Growth, 203, 186 (1999). https://doi.org/10.1016/S0022-0248(99)00076-7
- C. X. Xu, X. W. Sun, Z. L. Dong and M. B. Yu, Appl. Phys. Lett., 85, 3878 (2004). https://doi.org/10.1063/1.1811380
- Z. R. Tian, J. A. Voigt, J. Liu, B. Mckkenzie, M. J. Mcdermott, M. A. Rodriguez, H. Konishi and H. Xu, Nat. Mater., 2, 821 (2003) https://doi.org/10.1038/nmat1014
- K. Vanheusden, W. L. Warren, C. H. Seager, D. K. Tallant, J. A. Voigt and B. E. Gnade, J. Appl. Phys., 79, 7983 (1996). https://doi.org/10.1063/1.362349
- Y. Peng, Y. Wang, Q. G. Chen, Q. Zhu and A. W. Xu, CrystEngComm, 16, 7906 (2014). https://doi.org/10.1039/C4CE00695J