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Design of non-volatile digital circuit with assuming magnetic tunneling junction and carbon nanotubes field-effect transistors devices

  • Naeimi, Mohsen (Department of Electrical Engineering, Arak Branch, Islamic Azad University) ;
  • Tavakoli, Mohammd Bagher (Department of Electrical Engineering, Arak Branch, Islamic Azad University) ;
  • Sabbaghi-Nadooshan, Reza (Department of Electrical Engineering, Central Tehran Branch, Islamic Azad University)
  • Received : 2020.05.17
  • Accepted : 2021.04.15
  • Published : 2021.06.25
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Abstract

Power consumption has become the key constraint in electronics design, since the MOSFET threshold and hence the supply voltage can no longer be scaled. This trend calls for new device concepts such as Spintronic devices that are fundamentally different from CMOS. A carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. Magnetic tunnel junction (MTJ) is an emerging technology which has many advantages when used in logic in memory structures in conjunction with CMOS. In this paper, we present novel designs of hybrid CNTFET-MTJ circuits; AND, XOR and 1-bit full adder. The proposed CNTFET-MTJ full adder design has 20 times lower Power-delay-product (PDP) compared to the previous CMOS- MTJ full adder. Also, the delay in CNTFET-MTJ circuit is reduced 20 times compared to the CMOS- MTJ circuit.

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