Advances in nano research

  • 제10권1호
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  • Pages.91-99
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  • 2021
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  • 2287-237X(pISSN)
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  • 2287-2388(eISSN)
테크노프레스 (Techno-Press)
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DOI QR코드

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Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor

  • Chuan, M.W. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Wong, K.L. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Hamzah, A. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Rusli, S. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Alias, N.E. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Lim, C.S. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia) ;
  • Tan, M.L.P. (School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia)
  • 투고 : 2020.07.21
  • 심사 : 2020.11.20
  • 발행 : 2021.01.25
⟨ 이전 논문 다음 논문 ⟩

초록

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

키워드

과제정보

The authors acknowledge the Research Management Centre (RMC) of Universiti Teknologi Malaysia (UTM) for providing excellent support and a stimulating research environment. Mu Wen would like to convey his gratitude for the award of PhD Zamalah Scholarship from the School of Graduate Studies, UTM. Michael Tan would like to acknowledge the financial support from UTM Fundamental Research (UTMFR) Grant (Vote no.: Q.J130000.2551.21H51), which allowed the smooth progress of this research.

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