Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect on Al Concentration of AlGaAs Ternary Alloy

AlGaAs합금의 Al 도핑농도에 대한 효과

  • Kang, B.S. (Nanotechnology Research Center, Nano-science & Mechanical Engineering, Konkuk University)
  • 강병섭 (건국대학교 글로컬 캠퍼스 과학기술대학 나노전자기계공학)
  • Received : 2021.11.29
  • Accepted : 2021.12.16
  • Published : 2021.12.31
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Abstract

We investigated the electronic property and atomic structure for chalcopyrite (CH) AlxGa1-xAs semiconductor by using first-principles FPLMTO method. The CH-AlxGa1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-AlxGa1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-AlxGa1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

Keywords

Acknowledgement

본 연구는 원활한 수행을 위하여 건국대학교 글로컬캠퍼스 나노기계전자공학과의 지원이 있었다(2021년).

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