ETRI Journal

  • 제42권4호
  • /
  • Pages.549-561
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  • 2020
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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W-Band MMIC chipset in 0.1-㎛ mHEMT technology

  • Lee, Jong-Min (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Chang, Woo-Jin (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kang, Dong Min (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Min, Byoung-Gue (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Yoon, Hyung Sup (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Chang, Sung-Jae (DMC Convergence Research Department, Electronics and Telecommunications Research Institute) ;
  • Jung, Hyun-Wook (DMC Convergence Research Department, Electronics and Telecommunications Research Institute) ;
  • Kim, Wansik (LIG Nex1 Co., Ltd) ;
  • Jung, Jooyong (LIG Nex1 Co., Ltd) ;
  • Kim, Jongpil (LIG Nex1 Co., Ltd) ;
  • Seo, Mihui (Agency for Defense Development) ;
  • Kim, Sosu (Agency for Defense Development)
  • 투고 : 2020.03.27
  • 심사 : 2020.07.02
  • 발행 : 2020.08.18
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초록

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

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참고문헌

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