References
- H. -S. Kim, S. H. Jeon, J. S. Park, T. S. Kim, K. S. Son, J. -B. Seon, S. J. Seo, S. -J. Kim, E. Lee, J. G. Chung, H. Lee, S. Han, M. Ryu, S. Y. Lee, and K. Kim, Sci. Rep. 3, 1459 (2013). https://doi.org/10.1038/srep01459
- Z. Lin, L. Lan, P. Xiao, S. Sun, Y. Li, W. Song, P. Gao, E. Song, P. Zhang, L. Wang, H. Ning, and H. Peng, IEEE Electron Device Lett. 37, 1139 (2016). https://doi.org/10.1109/LED.2016.2593485
- M. Mativenga, S. An, and J. Jin, IEEE Electron Device Lett. 34, 1533 (2013). https://doi.org/10.1109/LED.2013.2284599
- S. Lee, Y. Chen, J. Kim, H. Kim, and J. Jang, J. Soc. Inf. Display. 27, 507 (2019).
- Y. Shin, S. T. Kim, K. Kim, M. Y. Kim, S. Ohand J. K. Jeong, Sci. Rep. 7, 1 (2017). https://doi.org/10.1038/s41598-016-0028-x
- J. Sheng, T. Hong, H. -M. Lee, K. Kim, M. Sasase, J. Kim, H. Hosono, and J. -S. Park, ACS Appl. Mater. Interface. 11, 40300 (2019). https://doi.org/10.1021/acsami.9b14310
- I. Song, S. Kim, H. Yin, C. J. Kim, J. Park, S. Kim, H. S. Choi, E. Lee, and Y. Park, IEEE Electron Device Lett. 29, 549 2008). https://doi.org/10.1109/LED.2008.920965
- T. Ohmaru, S. Yoneda, T. Nishijima, M. Endo, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsuni, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama, and S. Yamazaki, Proc. SSDM, 1144 (2012).
- S. Jeon, S. Park, I. Song, J. -H. Hur, J. Park, H. Kim, S. Kim, S. Kim, H. Yin, U. -I. Chung, E. Lee, and C. Kim, ACS Applied Materials & interface, 5, 1, (2011). https://doi.org/10.1021/am302009e
- S. Li, M. Tian, Q. Gao, M. Wang, T. Li, Q. HU, X. Li, and Y. Wu, Nat. Mater. 18, 1091 (2019). https://doi.org/10.1038/s41563-019-0455-8
- S. Katsui, H. Kobayashi, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, K. Nei, Y. Okazaki, T. Ikeda, and S. Yamazaki, Proc. SID. 311 (2019).
- J. H. Choi, J. -H. Yang, J. -E. Pi, C. -Y. Hwang, Y. -H. Kim, G. H. Kim, H.-O. Kim, and C. -S. Hwang, J. Soc. Inf. Display. 50, 319 (2019).
- C. -S. Hwang, S. -H. Ko, Park, H. Oh, M. -K. Ryu, K. -I. Cho, and S. -M. Yoon, IEEE Electron Device Lett. 35, 360 (2014). https://doi.org/10.1109/LED.2013.2296604
- H. -I. Yeom, G. Mun, Y. Nam, J. -B. Ko, S. -H. Lee, J. Choe, J. H. Choi, C. -S. Hwang, and S. -H. Ko Park, Proc. SID, 820 (2016).
- H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, H. Hosono, Nature 389, 939 (1997). https://doi.org/10.1038/40087
- E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945 (2012). https://doi.org/10.1002/adma.201103228
- X. Zou, G. Fang, L. Yuan, M. Li, W. Guan, X. Zhao, IEEE Electron Dev. Lett. 31, 827 (2010). https://doi.org/10.1109/LED.2010.2050576
- J. A. Caraveo-Frescas, P. K. Nayak, H. A. Al-Jawhari, D. B. Granato, U. ShwingenSchlogl, H. N. Alshareef, ACS Nano 7, 5160 (2013). https://doi.org/10.1021/nn400852r
- Z. Wang, P. K. Nayak, J. A. Caraveo-Frescas, H. N. Alshareef, Adv. Mater. 28, 3831 (2016) https://doi.org/10.1002/adma.201503080
- 백승기, 조성운, 조형균, Ceramist 17, 47 (2014).
- T. Kim, B. Yoo, Y. Youn, M. Lee, A. Song, K. -B. Chung, S. Han, J. K. Jeong, ACS Appl. Mater. Interfaces 11, 20214 (2019). https://doi.org/10.1021/acsami.9b04486
- T. Lin, X. Li, J. Jang, Appl. Phys. Lett. 108, 233503 (2016). https://doi.org/10.1063/1.4953222
- J. W. Park, B. H. Kang, H. J. Kim, Adv. Funct. Mater. 30, 1904632 (2020). https://doi.org/10.1002/adfm.201904632
- J. -H. Lee, W. -H. Choi, T. Hong, M. J. Kim, J. -S. Park, J. Vac. Sci. Technol. A 36, 060801 (2019). https://doi.org/10.1116/1.5047237
- G. Hautier, A. Miglio, G. Cede, G. -M. Rignanese, X. Gonze, Nat. Commun. 4, 2292, (2013). https://doi.org/10.1038/ncomms3292
- K. Yim, Y. Youn, M. Lee, D. Yoo, S. H. Cho, S. Han, NPJ Comput. Mater. 4, 17 (2018). https://doi.org/10.1038/s41524-018-0073-z
- C. G. Van de Walle, J. Neugebauer, Nature, 423, 626 (2003). https://doi.org/10.1038/nature01665
- D. Kumar, T. C. Gomes, N. Alves, L. Fugikawa-Santos, G. C. Smith and J. Kettle, IEEE Sens J. 20, 7532 (2020) https://doi.org/10.1109/JSEN.2020.2983418
- S. Jeon, S. -E. Ahn, I. Song, C. J. Kim, -I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, K. Ghaffarzadeh, J. Robertson, and K. Kim, Nat. Mat. 11, 301 (2012). https://doi.org/10.1038/nmat3256
- M. T. Vijjapu, S. G. Surya, S. Yuvaraja, X. Zhang, H. N. Alshareef, and K. N. Salama, ACS Sens. 5, 984 (2020). https://doi.org/10.1021/acssensors.9b02318
- D. Geng, S. Han, H. Seo, M. Mativenga, and J. Jang, IEEE Sens. J. 17, 585 (2017). https://doi.org/10.1109/JSEN.2016.2639525
- K. Ito, H. Satake, Y. Mori, A. C. Tseng and T. Sakata, Sci. Technol. Adv. Mater. 20, 917 (2019). https://doi.org/10.1080/14686996.2019.1656516
- T. Zou, C. Chen, B. Xiang, Y. Wang, C. Lin, S. Zhang, and H. Zhou, Proc. IEDM. 174 (2019).
- W. Seo. J. -E. Pi, S. H. Cho, S. -Y. Kang, S. -D. Ahn, C. -S. Hwang, H. -S. Jeon, J. -U. Kim, and. M. Lee, Sensors, 18, 293 (2018). https://doi.org/10.3390/s18010293
- N. Duan, Y. Li, H. -C. Chiang, J. Chen, W. -Q. Pan, Y. -X. Zhou, Y. -C. Chien, Y. -H. He, K. -H. Xue, G. Liu, T. -C. Chang, and X. -S. Miao, Nanoscale, 11, 17590 (2019). https://doi.org/10.1039/C9NR04195H
- P. B. Pillai and M. M. De Souza, ACS Appl. Mater. Interfaces 9, 1609 (2017). https://doi.org/10.1021/acsami.6b13746
- Y. -M. Kim, E. -J. Kim, W. -H. Lee, J. -Y. Oh and S. -M. Yoon, RSC Adv. 6, 52913 (2016). https://doi.org/10.1039/C6RA09503H
- R. A. John, J. Ko, M. R. Kulkarni, N. Tiwari, N. A. Chien, N. G. Ing, W. L. Leong, and N. Mathews, Small 13, 1701193 (2017). https://doi.org/10.1002/smll.201701193
- J. Wang, Y. Li, C. Yin, Y. Yang, and T. -L. Ren, IEEE Electron Device Lett. 38, 191 (2017). https://doi.org/10.1109/LED.2016.2639539
- T. K. Chang, C. -W. Lin, and S. Chang, Proc. SID 545 (2019).
- K. Kaneko, N. Inoue, S. Saito, N. Furutake, and Y. Hayashi, Symposium on VLSI Technology Digest, 120 (2011).