References
- Carslaw, H.S. and Jaeger, J.C. (1964), Conduction of Heat in Solids, Oxford University Press, London, UK.
-
Chakraborty, A., Xing, H., Craven, M.D., Keller, S., Mates, T., Speck, J.S., DenBaars, S.P. andMishrab, U.K. (2004), "Nonpolar
${\alpha}$ -plane p-type GaN and p-n-Junction Diodes", J. Appl. Phys., 96(8), 4494-4499. https://doi.org/10.1063/1.1790065 - Gusev, V.G. and Gusev, Yu.M. (1991), Electronics, Higher School, Moscow, Russia.
- Hosseini, M.R. and Sarvi, M.N. (2015), "Recent achievements in the microbial synthesis of semiconductor metal sulfide nanoparticles", Mater. Sci. Sem. Proc., 40, 293-301. https://doi.org/10.1016/j.mssp.2015.06.003
- Korn, G. and Korn, T. (1968), Mathematical Handbook for Scientists and Engineers, Definitions, Theorems and Formulas for Reference and Review, Second edition, McGraw-Hill Book Company, New York, USA.
- Lachin, V.I. and Savelov, N.S. (2001), Electronics, Phenics, Rostov-on-Don.
- Li, Y., Antonuk, L.E., El-Mohri, Y., Zhao, Q., Du, H., Sawant, A. and Wang, Y. (2006), "Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors", J. Appl. Phys., 99(6), 064501. https://doi.org/10.1063/1.2179149
- Lundin, V.V., Sakharov, A.V., Zavarin, E.E., Sinitsin, M.A., Nikolaev, A.E., Mikhailovsky, G.A., Brunkov, P.N., Goncharov, V.V., Ber, B.Ya., Kazantsev, D.Yu. and Tsatsul'nikov, A.F. (2009), "Effect of carrier gas and doping profile on the surface morphology of movpe grown heavily doped GaN:Mg layers", Semiconductors, 43(7), 963-967. https://doi.org/10.1134/S1063782609070276
- Mitsuhara, M., Ogasawara, M. and Sugiura, H. (1998), "Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl- beryllium", J. Crystal Growth, 183, 38-42. https://doi.org/10.1016/S0022-0248(97)00336-9
- Pankratov, E.L. (2017a), "On optimization of manufacturing of power amplifier circuit based on bipolar heterostructures to increase density of their elements. Influence of miss-match induced stress", Adv. Sci. Eng. Medicine, 9(10), 849-863. https://doi.org/10.1166/asem.2017.2045
- Pankratov, E.L. (2017b), "Influence of mismatch-induced stress in a heterostructure on value of charge carrier mobility", J. Computat. Theor. Nanosci., 14(10), 4955-4963. https://doi.org/10.1166/jctn.2017.6905
- Pankratov, E.L. and Bulaeva, E.A. (2013a), "Doping of materials during manufacture p-n-junctions and bipolar transistors. Analytical approaches to model technological approaches and ways of optimization of distributions of dopants", Rev. Theor. Sci., 1(1), 58-82. https://doi.org/10.1166/rits.2013.1004
- Pankratov, E.L. and Bulaeva, E.A. (2013b), "Optimal criteria to estimate temporal characteristics of diffusion process in a media with inhomogenous and nonstationary parameters, analysis of influence of variation of diffusion coefficient on values of time characteristics", Rev. Theor. Sci., 1(3), 307-318. https://doi.org/10.1166/rits.2013.1009
- Pankratov, E.L. and Bulaeva, E.A. (2015), "On prognosis of epitaxy from gas phase process for improvement of properties of films", 3D Res., 6(4), 40. https://doi.org/10.1007/s13319-015-0073-4
- Pankratov, E.L. and Bulaeva, E.A. (2016a), "On optimization of technological process to decrease dimensions of transistors with several sources", Micro Nanosyst., 8(1), 52-64. https://doi.org/10.2174/1876402908666160805103017
- Pankratov, E.L. and Bulaeva, E.A. (2016b), "An analytical approach for analysis and optimization of formation of field-effect heterotransistors", Multidiscipl. Model. Mater. Struct., 12(4), 578-604. https://doi.org/10.1108/MMMS-09-2015-0057
- Sokolov, Y.D. (1955), "About the definition of dynamic forces in the mine lifting", Appl. Mech., 1(1), 23-35.
- Sorokin, L.M., Veselov, N.V., Shcheglov, M.P., Kalmykov, A.E., Sitnikova, A.A., Feoktistov, N.A., Osipov, A.V. and Kukushkin, S.A. (2008), "Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy", Tech. Phys. Lett., 34, 992-994. https://doi.org/10.1134/S1063785008110278
- Stepanenko, I.P. (1980), Basis of Microelectronics, Soviet radio, Moscow, Soviet Union.
- Taguchia, H., Miyakea, S., Suzukib, A., Kamiyamab, S. and Fujiwarac, Y. (2016), "Evaluation of crystallinity of GaN epitaxial layer after wafer dicing", Mater. Sci. Sem. Proc., 41, 89-91. https://doi.org/10.1016/j.mssp.2015.07.083
- Talalaev, R.A., Yakovlev, E.V., Karpov, S.Yu. and Makarov, Yu.N. (2001), "On low temperature kinetic effects in metal-organic vapor phase epitaxy of III-V compounds", J. Crystal Growth, 230, 232-238. https://doi.org/10.1016/S0022-0248(01)01354-9
- Vorob'ev, A.A., Korablev, V.V. and Karpov, S.Yu. (2003), "The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen", Semiconductors, 37(7), 838-842. https://doi.org/10.1134/1.1592861