Current Optics and Photonics

Optical Society of Korea (한국광학회)
권호 표지
DOI QR코드

DOI QR Code

Experimental Investigation of Output Current Variation in Biased Silicon-based Quadrant Photodetector

  • Liu, Hongxu (Changchun University of Science and Technology, The Key Laboratory of Jilin Province Solid-State Laser Technology and Application) ;
  • Wang, Di (Changchun University of Science and Technology, The Key Laboratory of Jilin Province Solid-State Laser Technology and Application) ;
  • Li, Chenang (Changchun University of Science and Technology, The Key Laboratory of Jilin Province Solid-State Laser Technology and Application) ;
  • Jin, Guangyong (Changchun University of Science and Technology, The Key Laboratory of Jilin Province Solid-State Laser Technology and Application)
  • Received : 2020.02.17
  • Accepted : 2020.05.18
  • Published : 2020.08.25
Download PDF
⟨ Previous Next ⟩

Abstract

We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 ㎂, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.

Keywords

References

  1. T. W. Ng, S. L. Foo, and H. Y. Tan, "Gaussian laser beam diameter measurement using a quadrant photodiode," Opt. Laser Technol. 76, 065110 (2005).
  2. S. Jo, H. J. Kong, H. Bang, J.-W. Kim, and B. G. Jeon, "High range precision laser radar system using a Pockels cell and a quadrant photodiode," Appl. Phys. B 122, 143 (2016). https://doi.org/10.1007/s00340-016-6425-9
  3. Z. Li, H. Zhang, Z. Shen, and X. Ni, "Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon," J. Appl. Phys. 114, 033104 (2013). https://doi.org/10.1063/1.4815872
  4. X. Wang, Z. H. Sh en, J. Lu, and X. W. Ni, "Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes," J. Appl. Phys. 108, 033103 (2010). https://doi.org/10.1063/1.3466996
  5. X. Lv, Y. Pan, Z. Jia, Z. Li, H. Z, and X. Ni, "Laserinduced damage threshold of silicon under combined millisecond and nanosecond laser irradiation," J. Appl. Phys. 121, 113102 (2017). https://doi.org/10.1063/1.4978379
  6. S. E. Watkins, C.-Z. Zhang, R. M. Walser, and M. F. Becker, "Electrical performance of laser damaged silicon photodiodes," Appl. Opt. 29, 827-835 (1990). https://doi.org/10.1364/AO.29.000827
  7. U. Arp, P. S. Shaw, R. Gupta, and K. R. Lykke, "Damage to solid-state photodiodes by vacuum ultraviolet radiation," J. Electron Spectrosc. Relat. Phenom. 144-147, 1039-1042 (2005). https://doi.org/10.1016/j.elspec.2005.01.236
  8. J. P. Moeglin, "New Si detector hardening process against laser irradiation," Opt. Lasers Eng. 38, 261-268 (2002). https://doi.org/10.1016/S0143-8166(01)00170-1
  9. R. E. Vest and S. Grantham, "Response of a silicon photodiode to pulsed radiation," Appl. Opt. 42, 5054-5063 (2003). https://doi.org/10.1364/AO.42.005054
  10. D. Yuan, W. Di, W. Zhi, and F. T. Ran, "Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode," Appl. Opt. 57, 1051-1055 (2018). https://doi.org/10.1364/AO.57.001051
  11. D. Wang, Research on Long Pulse Laser Damaging on Silicon APD Detector (CNKI, Published: 2018), https://kns.cnki.net/kcms/detail/detail.aspx?filename=1018797791.nh&dbcode=CDFD&dbname=CDFD2019&v= (Accessed date: 2018).
  12. D. Wang, Z. Wei, G. Y. Jin, L. Chen, and H.-X. Liu, "Experimental and theoretical investigation of millisecondpulse laser ablation biased Si avalanche photodiodes," Int. J. Heat Mass Transfer 122, 391-394 (2018). https://doi.org/10.1016/j.ijheatmasstransfer.2018.01.096
  13. M. Jeong, W. J. Jo, H. S. Kim, and J. H. Ha, "Radiation hardness characteristics of Si-PIN radiation detectors," Nucl. Instrum. Methods Phys. Res. A 784, 119-123 (2015). https://doi.org/10.1016/j.nima.2014.11.013
  14. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer-Verlag, NY, 1984).
  15. C. L. Marquardt, J. F. Giuliani, and F. W. Fraser, "Observation of impurity migration in laser-damaged junction devices," Radiat. Eff. 23, 135-139 (1974). https://doi.org/10.1080/00337577408232055
  16. Z. Wei, D. Wang, and G. Y. Jin, "Numerical simulation of millisecond laser-induced output current in silicon-based positive-intrinsic-negative photodiode," Optik 207, 163806 (2020). https://doi.org/10.1016/j.ijleo.2019.163806
  17. K. Bertilsson, E. Dubaric, M. G. Thungstrröm, H.-E. Nilsson, and C. S. Petersson, "Simulation of a low atmospheric-noise modified four-quadrant position sensitive detector," Nucl. Instrum. Methods Phys. Res. A 466, 183-187 (2001). https://doi.org/10.1016/S0168-9002(01)00843-9
  18. M. Toyoda, K. Araki, and Y. Suzuki, "Measurement of the characteristics of a quadrant avalanche photo-diode application to a laser tracking system," Opt. Eng. 41, 145-150 (2002). https://doi.org/10.1117/1.1418222
  19. R. Enderlein and N. J. M. Horing, Fundamentals of Semiconductor Physics and Devices (World Sicentific, Singapore, 1997).
  20. M. Joseph, Fundamentals of Semiconductor Physics (Anch or Academic Publishing, Hamburg, 2015).
  21. M. Grundmann, The Physics of Semiconductors (Springer, Berlin, 2006).
  22. W. Shockley, Electron and Holes in Semiconductors (Van Nostrand, Princeton, 1950).