Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices

차세대 메모리 디바이스Gap-Fill 공정 위한 공간 분할 PE-ALD개발 및 공정 설계

  • 이백주 ((주)한화 / 기계 부분 연구소) ;
  • 황재순 ((주)한화 / 기계 부분 연구소) ;
  • 서동원 ((주)한화 / 기계 부분 연구소) ;
  • 최재욱 ((주)한화 / 기계 부분 연구소)
  • Received : 2020.05.08
  • Accepted : 2020.06.29
  • Published : 2020.06.30
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Abstract

This study is for the development of high temperature ALD SiO2 film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N2and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

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References

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