Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Enhancing the Performance of InGaN Photoelectrode by Using YAG:Ce3+@ beta-SiALON Phosphor

YAG:Ce3+@ beta-SiALON 형광체를 이용한 InGaN 광전극의 효과적인 물분해

  • Bae, Hyojung (Optoelectronics Convergence Research Center, Chonnam National University) ;
  • Lee, Daejang (UJL Inc. Advanced Institutes of Convergence Technology) ;
  • Cha, An-Na (School of Chemical Engineering, Chonnam National University) ;
  • Ju, Jin-Woo (Laser Research Center, Korea Photonics Technology Institute) ;
  • Moon, Youngboo (UJL Inc. Advanced Institutes of Convergence Technology) ;
  • Ha, Jun-Seok (School of Chemical Engineering, Chonnam National University)
  • Received : 2020.05.11
  • Accepted : 2020.06.08
  • Published : 2020.06.30
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Abstract

GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce3+ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

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References

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