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Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing

CMP용 리테이닝 링의 재질이 웨이퍼의 연마성능에 미치는 영향

  • Park, Ki-Won (Department of Mechanical Engineering, Graduate School, Incheon National University) ;
  • Kim, Eun-young (Department of Mechanical Engineering, Graduate School, Incheon National University) ;
  • Park, Dong-Sam (Department of Mechanical Engineering, Incheon National University)
  • 박기원 (인천대학교 대학원 기계공학과) ;
  • 김은영 (인천대학교 대학원 기계공학과) ;
  • 박동삼 (인천대학교 기계공학과)
  • Received : 2019.12.03
  • Accepted : 2019.12.18
  • Published : 2020.03.31

Abstract

This paper investigates the effects of retaining ring materials, particularly PPS and PEEK, used in the CMP process, on wafer polishing and ring wear. CMP can be performed using bonded type retaining rings made with PPS or injection molding type retaining rings made with PEEK. In this study, after polishing a wafer with a PPS retaining ring, the average profile height of the wafer was 0.098 ㎛ less than that of the wafer polished with a PEEK retaining ring, implying that PPS retaining rings achieve a higher polishing rate. In addition, the center area of the wafer profile had less deviation and improved flatness after polishing with the PPS ring. These results indicate that a higher polishing rate and smaller profile height deviation can be achieved using retaining rings made with PPS compared to retaining rings made with PEEK. Therefore, with semiconductor circuit patterns becoming finer and wafer sizes becoming larger, the use of PPS in CMP retaining rings can obtain more stable wafer polishing results compared to that of PEEK.

Keywords

References

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  2. CMP 패드 두께 프로파일 측정 장치 및 방법에 관한 연구 vol.23, pp.6, 2020, https://doi.org/10.21289/ksic.2020.23.6.1051