Advances in aircraft and spacecraft science

  • 제7권1호
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  • Pages.41-52
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  • 2020
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  • 2287-528X(pISSN)
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  • 2287-5271(eISSN)
테크노프레스 (Techno-Press)
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Photo-thermo-elastic interaction in a semiconductor material with two relaxation times by a focused laser beam

  • Jahangir, A. (Department of Mathematics, COMSATS University Islamabad) ;
  • Tanvir, F. (Department of Mathematics, COMSATS University Islamabad) ;
  • Zenkour, A.M. (Department of Mathematics, Faculty of Science, King Abdulaziz University)
  • 투고 : 2019.02.07
  • 심사 : 2019.05.30
  • 발행 : 2020.01.25
⟨ 이전 논문 다음 논문 ⟩

초록

The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.

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참고문헌

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