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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Passive parasitic UWB antenna capable of switched beam-forming in the WLAN frequency band using an optimal reactance load algorithm

  • Lee, Jung-Nam (Hyper-connected Communication Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lee, Yong-Ho (Hyper-connected Communication Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lee, Kwang-Chun (Hyper-connected Communication Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Tae Joong (Hyper-connected Communication Research Laboratory, Electronics and Telecommunications Research Institute)
  • Received : 2018.08.16
  • Accepted : 2019.02.18
  • Published : 2019.12.06
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Abstract

We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.

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References

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