Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Quantum Dot Light-Emitting Diodes with Poly-TPD/PVK Bilayer Hole Transport Layer

Poly-TPD/PVK 이중 박막 정공수송층 구조의 양자점발광다이오드

  • Kim, Hyun Soo (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Lee, Do Hyung (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Kim, Bada (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Hwang, Bo Ram (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Kim, Chang Kyo (Department of Electronics and Information Engineering, Soonchunhyang University)
  • 김현수 (순천향대학교 전자정보공학과) ;
  • 이도형 (순천향대학교 전자정보공학과) ;
  • 김바다 (순천향대학교 전자정보공학과) ;
  • 황보람 (순천향대학교 전자정보공학과) ;
  • 김창교 (순천향대학교 전자정보공학과)
  • Received : 2019.06.27
  • Accepted : 2019.07.18
  • Published : 2019.09.01
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Abstract

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

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References

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