참고문헌
- T. G. Yun, M. Park, D.H. Kim, D. Kim, J. Y. Cheong, J. G. Bae, S. M. Han, and I. D. Kim, ACS Nano, 13, 3141 (2019) https://doi.org/10.1021/acsnano.8b08560
- K. S. Kim, S. B. Choi, D. U. Kim, C. R Lee, and J. W. Kim, J. Mater. Chem. A, 6, 12420 (2018), https://doi.org/10.1039/C8TA02979B
- S. Zhang, N. Nguyen, B. Leonhardt, C. Jolowsky, A. Hao, J. G. Park, and R. Liang, Adv, EIectron. Mater., 5, 1800811 (2019). https://doi.org/10.1002/aelm.201800811
- C. F. Deng, D. Z. Wang, X. X. Zhang, and A. B. Li, Mater. Sci. Eng. A, 444, 138 (2007). https://doi.org/10.1016/j.msea.2006.08.057
- T.J. Kang, J. W. Yoon, D. I. Kim, S. S. Kum, Y. H. Huh, J. H. Hahn, S. H. Moon, H. Y. Lee, and Y. H. Kim, Adv. Mater., 19, 427 (2007), https://doi.org/10.1002/adma.200600908
- C. He, N. Zhao, C. Shi, X. Du, J. Li, H. Li, and Q. Cui, Adv. Mater., 19, 1128 (2007). https://doi.org/10.1002/adma.200601381
- S. I. Cha, K. T. Kim, S. N. Arshad, C. B. Mo, and S. H. Hong, Adv. Mater., 17, 1377 (2005). https://doi.org/10.1002/adma.200401933
- I. Kim, K. Woo, Z. Zhong, E. Lee, D. Kang, S. Jeong, Y. M. Choi, Y. Jang, S. Kwon, and J. Moon, ACS Appl. Mater. Interfaces, 9, 6163 (2017), https://doi.org/10.1021/acsami.6b14580
- S. Kim, S. Won, G. D. Sim, I. Park, and S. B. Lee, Nanotechnology, 24, .085701 (2013). https://doi.org/10.1088/0957-4484/24/8/085701
- S. Park, M. Vosguerichian, and Z. Bao, Nanoscale, 5, 1727 (2013). https://doi.org/10.1039/c3nr33560g
- H. J. Hwang, S.J. Joo, and H. S. Kim, ACS Appl. Mater. Interfaces, 7, 25413 (2015). https://doi.org/10.1021/acsami.5b08112
- K. S. Kim, B. G. Park, K. H. Jung, and S. B. Jung, Proc. 19th Int. Conf. on Comp. Mater. (eds. S. V. Hoa and P. Hubert) (Canadian Association for Composite Structures and Materials, Quebec, Canada, 2013) p. 7778.
- B. Rudra and D. Jennings, IEEE Trans, Reliab., 43, 354 (1994). https://doi.org/10.1109/24.326425
- K. S. Kim, J. O. Bang, and S. B. Jung, Curr. Appl. Phys., 13 S190 (2013). https://doi.org/10.1016/j.cap.2013.01.031
- K. S. Kim, S. B. Jung, and D. U. Kim, J. Mater. Sci. : Mater. in Electron., 27, 9676 (2016). https://doi.org/10.1007/s10854-016-5028-x