Nuclear Engineering and Technology

  • 제51권5호
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  • Pages.1428-1435
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  • 2019
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  • 1738-5733(pISSN)
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  • 2234-358X(eISSN)
한국원자력학회 (Korean Nuclear Society)
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High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

  • Hegde, Vinayakprasanna N. (Department of Studies in Physics, University of Mysore) ;
  • Praveen, K.C. (Laboratory for Electro-Optics Systems (LEOS), ISRO) ;
  • Pradeep, T.M. (Department of Studies in Physics, University of Mysore) ;
  • Pushpa, N. (Department of PG Studies in Physics, JSS College) ;
  • Cressler, John D. (School of Electrical and Computer Engineering, Georgia Institute of Technology) ;
  • Tripathi, Ambuj (Inter-University Accelerator Centre (IUAC)) ;
  • Asokan, K. (Inter-University Accelerator Centre (IUAC)) ;
  • Prakash, A.P. Gnana (Department of Studies in Physics, University of Mysore)
  • 투고 : 2018.06.18
  • 심사 : 2019.03.22
  • 발행 : 2019.06.25
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초록

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

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참고문헌

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