ZTO 박막의 부성저항에 의한 전류전압특성

Current Voltage Characteristic of ZTO Thin Film by Negative Resistance

  • Oh, Teresa (Division of Semiconductor Engineering, Cheongju University)
  • 투고 : 2019.06.07
  • 심사 : 2019.06.21
  • 발행 : 2019.06.30

초록

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

키워드

참고문헌

  1. Gilsang Yoon, Junyoung Lee, Iksoo Park, Bo Jin, Rock- Hyun Baek, Hyun-jin Shin and Jeong-soo Lee, "Formation of nanonet structure using polystyrene nanoparticle for highperformances TFT applications", Journal of the Semiconductor & Display Technology, 17, pp.36-40, (201).
  2. Sang-Heon Lee, Keon-Tae Park, and Young-Guk Son. "Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films". Korean Journ al of Materials Research. 12, pp 240-247, (2002). https://doi.org/10.3740/MRSK.2002.12.4.240
  3. Z. M. Jarzebski and J. P. Marton , "Physical Properties of $SnO_2$ Materials I . Preparation and Defect Structure," Journal of the electrochemical Society, 123, pp. 199-203, (1976). https://doi.org/10.1149/1.2133010
  4. Sung Hoon Lee, Jong Su Kim, Tae Wook Kang, Jong Ho Ryu and Sang Nam Lee, "Synthesis and Luminescence of Sr2Si5N8:Eu2+ Red Phosphor for High Color-Rendering White LED", Journal of the Semiconductor & Display Technology, 16, pp.11-15, (2017).
  5. Paranjape MA, Mane AU, Raychaudhuri AK, Shalini K, Shivashankar SA, Chakravarty BR, "Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure" , Thin Solid Films, 413(1-2), pp.8-15, (2002). https://doi.org/10.1016/S0040-6090(02)00446-7
  6. V. Vasu and A. Subrahmanyam, "Electrical and optical properties of sprayed $SnO_2$ films", Thin Solid Film, 193/194, pp. 973-980, (1990). https://doi.org/10.1016/0040-6090(90)90252-9
  7. Randhawa. H.S, Matthews. M.D, Bunshah, R.F, "$SnO_2$ films prepared by activated reactive evaporation", Thin Solid Films, 83, pp. 267-271, (1967). https://doi.org/10.1016/0040-6090(81)90678-7
  8. Teresa Oh, "Stability of Gas Response Characteristics of IGZO", Journal of the Semiconductor & Display Technology, 17, pp.17-20, (2018).
  9. Teresa Oh, Tunneling Phenomenon of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors for Flexible Display, Electronic Materials Letters, 11. pp. 853-861, (2015). https://doi.org/10.1007/s13391-015-4505-3
  10. Kenji Normura, Toshio Kamiya and Hideo Hosono, "Ambipolar Oixde Thin-Film Transistor", Adv. Mater. 23, pp. 3431-3434, (2011). https://doi.org/10.1002/adma.201101410