Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Improvement in Capacitor Characteristics of Titanium Dioxide Film with Surface Plasma Treatment

플라즈마 표면 처리를 이용한 TiO2 MOS 커패시터의 특성 개선

  • Shin, Donghyuk (Department of Materials Science and Engineering, Yonsei University) ;
  • Cho, Hyelim (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Seran (Department of Materials Science and Engineering, Yonsei University) ;
  • Oh, Hoonjung (BIT Micro Fab Research Center, Yonsei University) ;
  • Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University)
  • 신동혁 (연세대학교 신소재공학과) ;
  • 조혜림 (연세대학교 신소재공학과) ;
  • 박세란 (연세대학교 신소재공학과) ;
  • 오훈정 (연세대학교 BIT 마이크로 팹 연구소) ;
  • 고대홍 (연세대학교 신소재공학과)
  • Received : 2019.02.07
  • Accepted : 2019.03.17
  • Published : 2019.03.31
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Abstract

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

Keywords

References

  1. You Yil-Hwan et al., "Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition," Journal of Semiconductor & Display Equipment Technology, Vol. 5, No. 1, pp. 51-55, 2006.
  2. Jaesung Choi et al., "Improved Dit between ALD HfAlO Dielectric and InGaAs Substrate Using NH3 Plasma Passivation," Journal of Semiconductor & Display Equipment Technology, Vol. 17, No. 4, pp. 27-31, 2018.
  3. You Yil-Hwan et al., "Electrical/Microstructural Characterization of Dielectric Thin Films Prepared on Transparent Substrates," Journal of Semiconductor & Display Equipment Technology, Vol. 7, No. 1, pp. 53-57, 2008.
  4. Masaru Kadoshima et al., "Rutile-type $TiO_2$ thin film for high-${\kappa}$ gate insulator," Thin Solid Films, Vol. 424, pp. 224-228, 2003. https://doi.org/10.1016/S0040-6090(02)01105-7
  5. Woojin Jeon et al., "Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased $TiO_2$ Thin Films," ACS Applied Materials & Interfaces, Vol. 6, pp. 7910-7917, 2014. https://doi.org/10.1021/am501247u
  6. K.F.Albertin, M.A.Valle, and I.Pereyra, "Study of MOS Capacitors With $TiO_2$ And $SiO_2/TiO_2$ Gate Dielectric," Journal Integrated Circuits and Systems, Vol. 2, pp. 89-93, 2007. https://doi.org/10.29292/jics.v2i2.272
  7. A. K. Ray and A. Reisman, "The Formation of $SiO_2$ in an RF Generated Oxygen Plasma," Solid-State Science And Technology, Vol. 128, pp. 2460-2465, 1981.
  8. Jolm F. Moulder, William F. Stickle, Peter E. Sobol, Kennetlf D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, Minnesota: Perkin-Elmer Corp., 1992.
  9. Ing-Song Yu, Yu-Wun Wang, Hsyi-En Cheng, Zu-Po Yang and Chun-Tin Lin, "Surface Passivation and Antireflection Behavior of ALD $TiO_2$ on n-Type Silicon for Solar Cells," International Journal of Photoenergy, Vol. 7, pp. 431614, 2013.
  10. P Alexandrov, J Koprinarova and D Todorov, "Dielectric Properties of $TiO_2$ Films Reactively Sputtered from Ti in an RF Magnetron," Vacuum, Vol. 47, pp. 1333-1336, 1996. https://doi.org/10.1016/S0042-207X(96)00196-0