Fig. 1. FE-SEM images of ZnO films prepared by electrodeposition at -1.1 V at 70°C in different concentrations of zinc nitrate hexahydrate with/without ammonium hydroxide: (a) sample number 1, (b) sample number 2, (c) sample number 3, (d) sample number 4, (e) sample number 13 and (f) sample number 14 listed in Table 1. The inserted images are the cross-sectional images.
Fig. 2. FE-SEM images of SnO2-doped ZnO films prepared by electrochemical deposition at -1.1 V at 70°C in 10 mM zinc nitrate hexahydrate containing ammonium hydroxide with the addition of different amounts of 0.1 M tin chloride pentahydrate: (a) 200 μl (sample number 5), (b) 400 μl (sample number 10), (c) 600 μl (sample number 11) and (d) 800 μl (sample number 12). The inserted images are the cross-sectional images.
Fig. 3. FE-SEM images of SnO2-doped ZnO films prepared by electrochemical deposition at 70°C in 10 mM zinc nitrate hexahydrate containing 800 μl of 0.1 M tin chloride pentahydrate at different potentials: (a) -0.8 V (sample number 7), (b) -0.9 V (sample number 8), and (c) -1.0 V (sample number 9). EDX analysis of Fig. 3 (b) by TEM is shown in Fig. 3 (d).
Fig. 4. FE-SEM images of SnO2 doped ZnO, which were prepared by 2-step electrochemical deposition. The first step was conducted at -1.1 V at 70°C for 1 h in Solution Class 1 consisting of 10 mM zinc nitrate hexahydrate and ammonium hydroxide solution. The second step was carried out in Solution Class 2 consisting of 10mM zinc nitrate hexahydrate, ammonium hydroxide solution and 0.1 M tin chloride pentahydrate at different potentials: (a) -0.8 V (sample number 17), (b) -0.9 V (sample number18), (c) -1.0 V (sample number 19) and (d) -1.1 V (sample number 20). EDX element mapping data of Fig.4 (a) was shown in Fig. 4 (e). The inserted images are the cross-sectional images.
Fig. 5. Cyclic voltammogram in the range of -1.2 – 0 V (vs. Ag/AgCl sat’d KCl) with a scan rate of 1 mV/s in solution of (a) 10 mM zinc nitrate hexahydrate, (b) 10 mM zinc nitrate hexahydrate + 9 ml ammonium hydroxide and (c) 10 mM zinc nitrate hexahydrate + 9 ml ammonium hydroxide + 400 μl of 0.1 M tin chloride pentahydrate.
Fig. 6. XRD patterns of FTO glass substrate and electrochemically deposited films.
Fig. 7. Schematic diagram of morphological changes in terms of preparation method.
Table 1. Experimental conditions for electrochemical deposition of samples. Solution Class 1 consists with zinc nitrate and ammonium hydroxide. Solution Class 2 is the electrolyte in which tin chloride pentahydrate was added from Solution Class 1.
참고문헌
- C. G. Van de Walle, Phys. Rev. Lett. 2000, 85(5), 1012. https://doi.org/10.1103/PhysRevLett.85.1012
- Z. B. Fang, Z. J. Yan and Y. S. Tan, Appl. Surf. Sci. 2005, 241(3-4), 303-308. https://doi.org/10.1016/j.apsusc.2004.07.056
- Z. K. Tang, G. K. L. Wong and P. Yu, Appl. Phys. Lett. 1998, 72(25), 3270-3272. https://doi.org/10.1063/1.121620
- H. S. Kang, J. S. Kang and J. W. Kim, J. Appl. Phys. 2004, 95(3), 1246-1250. https://doi.org/10.1063/1.1633343
- Z. L. Wang, Appl. Phys. A-Mater. 2007, 88(1), 7-15. https://doi.org/10.1007/s00339-007-3942-8
- S. Chakrabarti and B. K. J. Dutta, Hazard. Mater. 2004, 112(3), 269-278. https://doi.org/10.1016/j.jhazmat.2004.05.013
- Q. Zhang, C. S. Dandeneau and X. Zhou, Adv. Mater. 2009, 21(41), 4087-4108. https://doi.org/10.1002/adma.200803827
- W. J. E. Beek, M. M. Wienk and R. A. J. Janssen, Adv. Mater. 2004, 16(12), 1009-1013. https://doi.org/10.1002/adma.200306659
- J. Q. Xu, Q. Y. Pan and Y. A. Shun, Sensor. Actuat. BChem. 2000, 66(1-3), 277-279. https://doi.org/10.1016/S0925-4005(00)00381-6
- T. Kong, Y. Chen and Y. Ye, Sensor. Actuat. B-Chem. 2009, 138(1), 344-350. https://doi.org/10.1016/j.snb.2009.01.002
- B. D. Yao, Y. F. Chan and N. Wang, Appl. Phys. Lett. 2002, 81(4), 757-759. https://doi.org/10.1063/1.1495878
- P. F. Carcia, R. S. McLean and M. H. Reilly, Appl. Phys. Lett. 2002, 82(7), 1117-1119. https://doi.org/10.1063/1.1553997
- J. J. Wu and S. C. Liu, Adv. Mater. 2002, 14(3), 215-218. https://doi.org/10.1002/1521-4095(20020205)14:3<215::AID-ADMA215>3.0.CO;2-J
- Y. Natsume and H. Sakata, Thin Solid Films 2000, 372(1-2), 30-36. https://doi.org/10.1016/S0040-6090(00)01056-7
- M. Li, J. Zhai and H. Liu, J. Phys. Chem. B 2003, 107(37), 9954-9957. https://doi.org/10.1021/jp035562u
- T. Yoshida and H. Minoura, Adv. Mater. 2000, 12(16), 1219-1222. https://doi.org/10.1002/1521-4095(200008)12:16<1219::AID-ADMA1219>3.0.CO;2-5
- J. Park, K. Kim and J. Choi, Curr. Appl. Phys. 2013, 13(7), 1370-1375. https://doi.org/10.1016/j.cap.2013.04.015
- Y. Kim, J. Park and J. Choi, Electrochim. Acta 2012, 78, 417-421. https://doi.org/10.1016/j.electacta.2012.06.022
- E. Comini, C. Baratto and G. Faglia, Prog. Mater. Sci. 2009, 54(1), 1-67. https://doi.org/10.1016/j.pmatsci.2008.06.003
- B. Cheng and E. T. Samulski, Chem. Commun. 2004, 8, 986-987.
- S. Y. Bae, C. W. Na and J. H. Kang, J. Phys. Chem. B 2005, 109(7), 2526-2531. https://doi.org/10.1021/jp0458708
- A. Ohtomo, K. Tamura and K. Saikusa, Appl. Phys. Lett. 1999, 75(17), 2635-2637. https://doi.org/10.1063/1.125102
- M. Tzolov, N. Tzenov and D. Dimova-Malinovska, Thin Solid Films 2000, 379(1-2), 28-36. https://doi.org/10.1016/S0040-6090(00)01413-9
- M. Peiteado, Y. Iglesias and J. F. Fernandez, Mater. Chem. Phys. 2007, 101(1), 1-6. https://doi.org/10.1016/j.matchemphys.2006.02.005
- F. J. Sheini, M. A. More and S. R. J. Jadkar, J. Phys. Chem. C 2010, 114(9), 3843-3849. https://doi.org/10.1021/jp911080f
- M. Ahmad, S. Yingying and H. J. Sun, Solid State Chem. 2012, 196, 326-331. https://doi.org/10.1016/j.jssc.2012.06.032
- N. Ye, J. Qi and Z. Qi, J. Power Sources 2010, 195(17), 5806-5809. https://doi.org/10.1016/j.jpowsour.2010.03.036
- W. Plieth Electrochemistry for Materials Science, Elsevier, Oxford, U.K, 2008.
- S. Jiao, K. Zhang and S. Bai, Electrochim. Acta 2013, 111, 64-70. https://doi.org/10.1016/j.electacta.2013.08.050
- Z. Chen, S. Li and W. Zhang, J. Alloys Compd. 2013, 557, 274-278. https://doi.org/10.1016/j.jallcom.2012.11.177
- Y. Salhi, S. Cherrouf, M. Cherkaoui and K. Abdelouahdi, Electrochim. Acta 2016, 367, 64-69.