Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Electrical and Optical Properties of SnO2/Cu(Ni)/SnO2 Multi-Layer Structures Transparent Electrode According to Annealing Temperature

열처리 온도에 따른 SnO2/Cu(Ni)/SnO2 다층구조 투명전극의 전기·광학적 특성

  • Jeong, Ji-Won (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Kong, Heon (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Lee, Hyun-Yong (School of Chemical Engineering, Chonnam National University)
  • 정지원 (전남대학교 신화학소재공학과) ;
  • 공헌 (전남대학교 신화학소재공학과) ;
  • 이현용 (전남대학교 화학공학부)
  • Received : 2018.10.22
  • Accepted : 2018.11.30
  • Published : 2019.03.01
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Abstract

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

Keywords

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Fig. 1. Schematic diagram of oxide/metal/oxide multi-layer structure.

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Fig. 2. FESEM image of 8 nm Cu(Ni) film depositing onto SnO2 (30 nm) with annealing temperatures at (a) room temperature and (b) 250℃ for 1hr and 8 nm Cu film depositing onto SnO2 (30 nm) with annealing temperatures at (c) room temperature and (d) 250℃ for 1 hr.

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Fig. 3. XRD patterns of Cu and Cu(Ni) film at different annealing temperature. (a) Cu and (b) Cu(Ni).

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Fig. 4. Grain size and FWHM of (111) peak of Cu and Cu(Ni) films prepared at various annealing temperatures.

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Fig. 5. The effect of Cu layer thickness on the (a) transmittance and (c) sheet resistance. The effect of Cu(Ni) layer thickness on the (b) transmittance and (d) sheet resistance.

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Fig. 6. The transmittance of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature. (a) as-dep (b) 200℃, (c) 250℃, and (d) 300℃.

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Fig. 7. The sheet resistance of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature.

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Fig. 8. The figure of merit (fom) of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature.

Table 1. Deposition and annealing parameters.

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