한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제52권6호
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  • Pages.306-309
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  • 2019
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
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Influence of Rapid Thermal Annealing on the Opto-Electrical Performance of Ti-doped Indium Oxide Thin Films

  • Choe, Su-Hyeon (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 투고 : 2019.10.15
  • 심사 : 2019.11.25
  • 발행 : 2019.12.31
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초록

Titanium (Ti) doped indium oxide (In2O3) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300℃, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In2O3 (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10-4 Ωcm at 300℃. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.

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참고문헌

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