Current Photovoltaic Research

  • 제7권4호
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  • Pages.97-102
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  • 2019
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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광흡수층 두께에 따른 투광형 비정질 실리콘 박막 태양전지의 양면발전 성능특성

Impact of Absorber Thickness on Bifacial Performance Characteristics of Semitransparent Amorphous Silicon Thin-Film Solar Cells

  • 서영훈 (태양광연구실, 한국에너지기술연구원) ;
  • 이아름 (태양광연구실, 한국에너지기술연구원) ;
  • 신민정 (태양광연구실, 한국에너지기술연구원) ;
  • 조아라 (태양광연구실, 한국에너지기술연구원) ;
  • 안승규 (태양광연구실, 한국에너지기술연구원) ;
  • 박주형 (태양광연구실, 한국에너지기술연구원) ;
  • 유진수 (태양광연구실, 한국에너지기술연구원) ;
  • 최보훈 (신소재물리학과, 동아대학교) ;
  • 조준식 (태양광연구실, 한국에너지기술연구원)
  • Seo, Yeong Hun (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Lee, Ahruem (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Shin, Min Jeong (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Cho, Ara (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Ahn, Seungkyu (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Park, Joo Hyung (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Yoo, Jinsu (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Choi, Bo-Hun (Department of Materials Physics, Dong-A University) ;
  • Cho, Jun-Sik (Photovoltaics Laboratory, Korea Institute of Energy Research)
  • 투고 : 2019.09.25
  • 심사 : 2019.12.08
  • 발행 : 2019.12.31
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초록

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (JSC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (VOC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the JSC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the VOC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

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참고문헌

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