Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect of the Substrate Temperature on Monitoring of Atomic Layer Etching Rate via an In-situ Ellipsometer

타원계측장치를 이용한 실시간 원자층 식각률 모니터링에서 기판 온도의 영향

  • Received : 2019.12.09
  • Accepted : 2019.12.16
  • Published : 2019.12.31
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Abstract

Atomic layer etching (ALE) is one of the most promising techniques in the semiconductor industry. Since ALE has to be precisely controlled on the angstrom scale to achieve ideal results, an in-situ analysis of the processes is highly required. In this regard, we found during ALE experiments with in-situ monitoring with an ellipsometer that changes in the substrate temperature affected the refractive index of a material, leading to changes in measured film thickness. In addition, more ideal ALE results could be achieved by keeping the substrate temperature constant.

Keywords

References

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