반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Study on the Coupled Effects of Process Parameters on Silicon Growth Using Chemical Vapor Deposition

  • Ramadan, Zaher (Dept. of Mechanical Design Eng., College of Engineering, Chonbuk National University) ;
  • Ko, Dong Kuk (Dept. of Mechanical Eng., College of Engineering, Chonbuk National University) ;
  • Im, Ik-Tae (Dept. of Mechanical Design Eng., College of Engineering, Chonbuk National University)
  • 투고 : 2019.09.18
  • 심사 : 2019.09.26
  • 발행 : 2019.09.30
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초록

Response surface methodology (RSM) is used to investigate the complex coupling effects of different operating parameters on silicon growth rate in planetary CVD reactor. Based on the computational fluid dynamics (CFD) model, an accurate RSM model is obtained to predict the growth rate with different parameters, including temperature, pressure, rotation speed of the wafer, and the mole fraction of dichlorosilane (DCS). Analysis of variance is used to estimate the contributions of process parameters and their interactions. Among the four operating parameters that have been studied, the influences of susceptor temperature and the operating pressure were the most significant factors that affect silicon growth rate, followed by the mole fraction of DCS. The influence of wafer rotation is the least. The validation tests show that the results of silicon deposition rate obtained from the regression model are in good agreement with those from CFD model and the maximum deviations is 2.15%.

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참고문헌

  1. D.-S. Shin, H.-S. Rhee, T. Ueno, H. Lee and S.-H. Lee, Methods of fabricating a semiconductor device using a selective epitaxial growth technique, U.S. Patent No. 7,361,563., 2008.
  2. F.-R. Fan, Y. Ding, D.-Y. Liu, Z.-Q. Tian and Z. L. Wang, Facet-selective epitaxial growth of heterogeneous nanostructures of semiconductor and metal: ZnO nanorods on Ag nanocrystals, Journal of the American Chemical Society, Vol. 131, no.34, 2009, pp. 12036-12037. https://doi.org/10.1021/ja9036324
  3. C. H. Ang, W. Lin and J. Z. Zheng, Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth, U.S. Patent No. 6,743,291., 2004.
  4. S. Pae, T. Su, J. P. Denton and G. W. Neudeck, Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth. IEEE Electron Device Letters, 20 (5), 1999, pp. 194-196. https://doi.org/10.1109/55.761012
  5. R. Loo, J. Sun, L. Witters, A. Hikavyy, B. Vincent, Y. Shimura, P. Favia, O. Richard, H. Bender and W. Vandervorst, In Strained Ge FinFET structures fabricated by selective epitaxial growth, Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, IEEE: 2014; pp. 19-20.
  6. M. Hierlemann, A. Kersch, C. Werner and H. Schafe, A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor. Journal of The Electrochemical Society, 142 (1), 1995, pp.259-266. https://doi.org/10.1149/1.2043894
  7. H. Habuka, Y. Aoyama, S. Akiyama, T. Otsuka, W.-F. Qu, M. Shimada and K. Okuyama, Chemical process of silicon epitaxial growth in a SiHCl3-H2 system. Journal of Crystal Growth, 207 (1), 1999, pp. 77-86. https://doi.org/10.1016/S0022-0248(99)00360-7
  8. I. H. Oh, C. G. Takoudis and G. W. Neudeck, Mathematical modeling of epitaxial silicon growth in pancake Chemical Vapor Deposition reactors. Journal of the Electrochemical Society, 138 (2), 1991, pp. 554-567. https://doi.org/10.1149/1.2085628
  9. I. Zaidi, Y.-H. Jang, D. G. Ko and I. T. Im, Numerical modeling study on the epitaxial growth of silicon from dichlorosilane. Journal of Crystal Growth, 483, 2018, pp.1-8. https://doi.org/10.1016/j.jcrysgro.2017.11.009
  10. R. Hazbun, J. Hart, R. Hickey, A. Ghosh, N. Fernando, S. Zollner, T. N. Adam and J. Kolodzey, Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition. Journal of Crystal Growth, 444, 2016, pp. 21-27. https://doi.org/10.1016/j.jcrysgro.2016.03.018
  11. R. Bartlome, S. De Wolf, B. Demaurex, C. Ballif, E. Amanatides and D. Mataras, Practical silicon deposition rules derived from silane monitoring during plasmaenhanced chemical vapor deposition. Journal of Applied Physics, 117 (20), 2015, 203303. https://doi.org/10.1063/1.4921696
  12. C. Schüler, F. Betzenbichler, C. Drescher and O. Hinrichsen, Optimization of the synthesis of Ni catalysts via chemical vapor deposition by response surface methodology. Chemical Engineering Research and Design, 132, 2018, pp. 303-312. https://doi.org/10.1016/j.cherd.2018.01.015
  13. S. Biira, P. L. Crouse, H. Bissett, B. Alawad, T. T. Hlatshwayo, J. Nel and J. B. Malherbe, Optimization of the synthesis of ZrC coatings in a radio frequency induction-heating chemical vapour deposition system using response surface methodology. Thin Solid Films, 624, 2017, pp. 61-69. https://doi.org/10.1016/j.tsf.2017.01.018
  14. G. Allaedini, S. M. Tasirin and P. Aminayi, Yield optimization of nanocarbons prepared via chemical vapor decomposition of carbon dioxide using response surface methodology. Diamond and Related Materials, 66, 2016, pp. 196-205. https://doi.org/10.1016/j.diamond.2016.04.013
  15. L.-s. An, C.-j. Liu and Y.-w. Liu, Optimization of operating parameters in polysilicon chemical vapor deposition reactor with response surface methodology. Journal of Crystal Growth, 489, 2018, pp. 11-19. https://doi.org/10.1016/j.jcrysgro.2018.02.030
  16. J. Li, Z.-y. Fei, Y.-f. Xu, J. Wang, B.-f. Fan, X.-j. Ma and G. Wang, Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model. Open Science, 5 (2), 2018, 171757.
  17. Z. Ramadan, H. M. Abdelmotalib and I.-T. Im, Modeling of Epitaxial Silicon Growth from the DCSH2-HCl System in a Large Scale CVD Reactor. IEEE Transactions on Semiconductor Manufacturing 2018, pp. 363-370.
  18. G. E. Box and N. R. Draper, Empirical model-building and response surfaces: John Wiley & Sons, 1987.
  19. R. L. Mason, R. F. Gunst and J. L. Hess, Statistical design and analysis of experiments: with applications to engineering and science. John Wiley & Sons; Vol. 474, 2003.
  20. A. Vohra and T. Satyanarayana, Statistical optimization of the medium components by response surface methodology to enhance phytase production by Pichia anomala. Process Biochemistry, 37 (9), 2002, pp. 999-1004. https://doi.org/10.1016/S0032-9592(01)00308-9