전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제67권10호
  • /
  • Pages.1370-1374
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  • 2018
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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SnS2/p-Si 이종접합 광 검출기

SnS2/p-Si Heterojunction Photodetector

  • Oh, Chang-Gyun (Department of Electrical Engineering, Incheon National University) ;
  • Cha, Yun-Mi (Department of Electrical Engineering, Incheon National University) ;
  • Lee, Gyeong-Nam (Department of Electrical Engineering, Incheon National University) ;
  • Jung, Bok-Mahn (Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • 투고 : 2018.07.26
  • 심사 : 2018.09.18
  • 발행 : 2018.10.01
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초록

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

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참고문헌

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