Journal of the Korean Physical Society

  • 제73권9호
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  • Pages.1356-1361
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  • 2018
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  • 0374-4884(pISSN)
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  • 1976-8524(eISSN)
한국물리학회 (Korean Physical Society)
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Use of 1.7 kV and 3.3 kV SiC Diodes in Si-IGBT/ SiC Hybrid Technology

  • Sharma, Y.K. (Dynex Semiconductor LTD) ;
  • Coulbeck, L. (Dynex Semiconductor LTD) ;
  • Mumby-Croft, P. (Dynex Semiconductor LTD) ;
  • Wang, Y. (Dynex Semiconductor LTD) ;
  • Deviny, I. (Dynex Semiconductor LTD)
  • 투고 : 2018.04.16
  • 심사 : 2018.07.06
  • 발행 : 2018.11.15
⟨ 이전 논문 다음 논문 ⟩

초록

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

키워드

참고문헌

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