GaN E-HEMT에 대한 이해와 SiC MOSFET과의 성능비교

  • 발행 : 2018.06.20

초록

키워드

참고문헌

  1. E. Faraci, "Designing offline LED drivers with GaN," How2Power Today, Jul. 2015.
  2. D. C. Sheridan, D. Y. Lee, and A. Ritenour, "Ultra-low loss 600V - 1200V GaN power transistors for high efficiency applications," PCIM Europe 2014, 2014.
  3. VisIC Technologies, "1200-V GaN power modules provide efficient, high-speed switching," How2Power Today, Oct. 2016.
  4. H. Kurumatani and S. Katsura, "GaN-HEMTbased three level T-type NPC inverter using reverse-conducting mode in rectifying," 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), pp. 1941 - 1946, 2017.
  5. R. Chu "1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance," IEEE Electron Device Letters, Vol. 32, No. 5, May 2011.