GaN E-HEMT에 대한 이해와 SiC MOSFET과의 성능비교

References

1. E. Faraci, "Designing offline LED drivers with GaN," How2Power Today, Jul. 2015.
2. D. C. Sheridan, D. Y. Lee, and A. Ritenour, "Ultra-low loss 600V - 1200V GaN power transistors for high efficiency applications," PCIM Europe 2014, 2014.
3. VisIC Technologies, "1200-V GaN power modules provide efficient, high-speed switching," How2Power Today, Oct. 2016.
4. H. Kurumatani and S. Katsura, "GaN-HEMTbased three level T-type NPC inverter using reverse-conducting mode in rectifying," 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), pp. 1941 - 1946, 2017.
5. R. Chu "1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance," IEEE Electron Device Letters, Vol. 32, No. 5, May 2011.