Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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The industrial trends of GaN substrates on the power electronic semiconductors

전력반도체용 GaN 기판 산업동향

  • Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • In, Jun Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
  • 이희애 (한양대학교 신소재공학과) ;
  • 박재화 (한양대학교 신소재공학과) ;
  • 이주형 (한양대학교 신소재공학과) ;
  • 박철우 (한양대학교 신소재공학과) ;
  • 강효상 (한양대학교 신소재공학과) ;
  • 인준형 (한양대학교 신소재공학과) ;
  • 심광보 (한양대학교 신소재공학과)
  • Received : 2018.06.08
  • Accepted : 2018.08.10
  • Published : 2018.08.31
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Abstract

The demand on use of GaN single crystal substrates for high efficient and environment - friended high power electronic semiconductor has be increased. The industrial business trend on GaN substrate along with its research activities has been reviewed through the recent scientific and technical in formations on the basic of Yole report (2013). The research on the GaN single crystal substrate has been performed continuously for the purpose of the high quality and larger diameter, but its market has not been activated yet.

최근 전세계적으로 환경오염 및 에너지 고갈에 대한 대책 마련의 일환으로 에너지 재생 및 절약 소자인 고효율 친환경 전력반도체로서 GaN 전력소자에 대한 관심이 고조되어가고 있다. 이를 위해서, GaN 단결정 기판의 사용이 절실히 요구되는 바, Yole사 보고서(2013)와 국내 외 GaN 관련 산학연의 최신 발표(2017)를 바탕으로 최근 GaN 단결정 산업동향을 리뷰하였다. GaN 단결정 기판에 대한 연구개발은 저결함, 대구경을 목표로 지속적으로 진행되고 있으나, 아직 시장형성이 활성화되고 있지 못하다.

Keywords

References

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