Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Influence of the Wafer Resistivity for Dopant-Free Silicon Heterojunction Solar Cell

실리콘 웨이퍼 비저항에 따른 Dopant-Free Silicon Heterojunction 태양전지 특성 연구

  • Kim, Sung Hae (Department of Materials and Chemical Engineering, Hanyang University) ;
  • Lee, Jung-Ho (Department of Materials and Chemical Engineering, Hanyang University)
  • 김성해 (재료화학공학과, 한양대학교 ERICA캠퍼스) ;
  • 이정호 (재료화학공학과, 한양대학교 ERICA캠퍼스)
  • Received : 2018.04.26
  • Accepted : 2018.06.09
  • Published : 2018.06.30
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Abstract

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

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