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고온열전모듈용 금속유리계 페이스트 연구

Research for Solder Paste in Metallic Glass System for Thermoelectric Modules

  • 서승호 (한국기술교육대학교 에너지신소재공학과) ;
  • 손근식 (한국기술교육대학교 에너지신소재공학과) ;
  • 서강현 (한국기술교육대학교 에너지신소재공학과) ;
  • 최순목 (한국기술교육대학교 에너지신소재공학과)
  • Seo, Seung-Ho (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Son, Geun Sik (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Seo, Kang Hyun (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Choi, Soon-Mok (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
  • 투고 : 2017.09.06
  • 심사 : 2018.02.05
  • 발행 : 2018.05.01

초록

We researched about a bulk metallic glass system as an additive to an Ag paste for high temperature thermoelectric modules. Bulk metallic glass (BMG) ribbons were produced by using a rapid solidification process (RSP) under a cooling rate condition higher than $10^{\circ}C/sec$. We investigated BMG characteristics of the ribbons by means of x-ray diffraction (XRD) and differential scanning calorimetry (DSC) in order to evaluate the glass transition temperature ($T_g$) and the recrystallization temperature ($T_x$) lower than $400^{\circ}C$. A milling process was also developed to apply the BMG ribbons to a commercial Al paste as an additive for lower sintering temperature.

키워드

참고문헌

  1. Z. G. Chen, G. Han, L. Yang, L. Cheng, and J. Zou, Prog. Nat. Sci.: Mater. Int., 22, 535 (2012). [DOI: https://doi.org/10.1016/j.pnsc.2012.11.011]
  2. K. Shenai, M. Dudley, and R. F. Davis, ECS J. Solid State Sci. Technol., 2, N3055 (2013). [DOI: https://doi.org/10.1149/2.012308jss]
  3. V. Chidambaram, J. Hattel, and J. Hald, Microelectron. Eng., 88, 981 (2011). [DOI: https://doi.org/10.1016/j.mee.2010.12.072]
  4. M. Li, Z. Li, Y. Xiao, and C. Wang, Appl. Phys. Lett., 102, 094104 (2013). [DOI: https://doi.org/10.1063/1.4794684]
  5. K. S. Siow, J. Alloys Compd., 514, 6 (2012). [DOI: https://doi.org/10.1016/j.jallcom.2011.10.092]
  6. K. S. Siow, J. Electron. Mater., 43, 947 (2014). [DOI: https://doi.org/10.1007/s11664-013-2967-3]
  7. H. Schwarzbauer and R. Kuhnert, IIEEE Trans. Ind. Appl., 27, 93 (1991). [DOI: https://doi.org/10.1109/28.67536]
  8. R. Kajiwara, S. Motowaki, K. Ito, T. Ishii, K. Arai. T. Nakajo, and H. Kagii, Renesas Technology Corp, US2010/0195292 A1 (2010).
  9. K. Suganuma, S. J. Kim, and K. S. Kim, JOM, 61, 64 (2009). [DOI: https://doi.org/10.1007/s11837-009-0013-y]
  10. G. L. Allen, R. A. Bayles, W. W. Gile, and W. A. Jesser, Thin Solid Films, 144, 297 (1986). [DOI: https://doi.org/10.1016/0040-6090(86)90422-0]
  11. P. R. Couchman and W. A. Jesser, Nature, 269, 481 (1977). [DOI: https://doi.org/10.1038/269481a0]
  12. H. Schwarzbauer, Siemens, US5058796, USA (1991).
  13. H. Hozoji, T. Morita, and H. Sasaki, Hitachi, US7393771B2, USA (2008).
  14. A. Hu, J. Y. Guo, H. Alarifi, G. Patane, Y. Zhou, G. Compagnini, and C. X. Xu, Appl. Phys. Lett., 97, 153117 (2010). [DOI: https://doi.org/10.1063/1.3502604]
  15. W. Schmitt, T. Dickel, and K. Stenger, Heraeus, US2009/0134206A1, Germany (2009).
  16. K. Yamakawa and K. Mine, Nihon Handa, US7766218 (2010).
  17. M. Kuramoto, S. Ogawa, M. Niwa, K. S. Kim, and K. Suganuma, IEEE Trans. Compon. Packag. Technol., 33, 801 (2010). [DOI: https://doi.org/10.1109/tcapt.2010.2064313]
  18. I. J. Rasiah, Honeywell International, US7083850B2, USA (2006).
  19. J. Yan, G. Zou, A. P. Wu, J. Ren, J. Yan, A. Hu, and Y. Zhou, Scripta Mater., 66, 582 (2012). [DOI: https://doi.org/10.1016/j.criptamat.2012.01.007]
  20. S. Egelkraut, L. Frey, M. Knoerr, and A. Schletz, Proc. 2010 12th Electronics Packaging Technology Conference (IEEE, Singapore, 2010), p. 660.
  21. H. S. Chen, Rep. Prog. Phys., 43, 353 (1980). [DOI: https://doi.org/10.1088/0034-4885/43/4/001]
  22. A. J. Drehman, A. L. Greer, and D. Turnbull, Appl. Phys. Lett., 41, 716 (1982). [DOI: https://doi.org/10.1063/1.93645]
  23. K. H. Park, S. W. You, S. C. Ur, I. H. Kim, S. M. Choi, and W. S. Seo, J. Electron. Mater., 41, 1051 (2012). [DOI: https://doi.org/10.1007/s11664-011-1889-1]
  24. K. H. Park, W. S. Seo, S. M. Choi, and I. H. Kim, J. Korean Phys. Soc., 64, 79 (2014). [DOI: https://doi.org/10.3938/jkps.64.79]
  25. S. Y. Kim, S. J. Kim, S. S. Jee, J. M. Park, K. H. Park, S. C. Park, E. A Cho, J. H. Lee, I. Y. Song, S. M. Lee, I. T. Han, K. R. Lim, W. T. Kim, J. C. Park, J. Eckert, D. H. Kim, and E. S. Lee, Sci. Rep., 3, 2185 (2013). [DOI: https://doi.org/10.1038/srep02185]