Journal of information and communication convergence engineering

  • 제16권4호
  • /
  • Pages.248-251
  • /
  • 2018
  • /
  • 2234-8255(pISSN)
  • /
  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지
DOI QR코드

DOI QR Code

Electrical Properties of TiO2 Thin Film and Junction Analysis of a Semiconductor Interface

  • Oh, Teresa (Department of Semiconductor, Cheongju University)
  • 투고 : 2018.08.30
  • 심사 : 2018.12.12
  • 발행 : 2018.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

키워드

E1ICAW_2018_v16n4_248_f0001.png 이미지

Fig. 1. Mobility of TiO2 thin films with various annealing temperatures.

E1ICAW_2018_v16n4_248_f0002.png 이미지

Fig. 2. Resistance of TiO2 thin films with various annealing temperatures.

E1ICAW_2018_v16n4_248_f0003.png 이미지

Fig. 3. Carrier concentration of TiO2 thin films with various annealingtemperatures.

E1ICAW_2018_v16n4_248_f0004.png 이미지

Fig. 4. Mobility variation of TiO2 thin film that annealed at 150°C.

E1ICAW_2018_v16n4_248_f0005.png 이미지

Fig. 5. PL spectra of TiO2 thin films with various annealing temperatures. (a) 70°C, (b) 90°C, (c) 110°C, (d) 130oC, (e) 150°C, and (f) 170°C.

E1ICAW_2018_v16n4_248_f0006.png 이미지

Fig. 6. PL spectra of TiO2 thin film annealed at 90°C, 110°C, and 130°C. Fig. 4. Mobility variation of TiO2 thin film that annealed at 150°C.

E1ICAW_2018_v16n4_248_f0007.png 이미지

Fig. 7. Electrical characteristics of TiO2 thin films with various annealing temperatures. (a) Long range, (b) short range, and (c) TiO2 thin film that annealed at 110°C had the lowest current.

E1ICAW_2018_v16n4_248_f0008.png 이미지

Fig. 8. Electrical characteristics in the negative voltage.

참고문헌

  1. H. Kim and S. Choi, "Growth of sheet-like ZnO nanostructures on ZnO nano rods using chemical bath deposition," Applied Science and Convergence Technology, vol. 27, no. 2, pp. 38-41, 2018. DOI: 10.5757/ASCT.2018.27.2.38.
  2. T. Oh, "Tunneling phenomenon of amorphous indium-gallium-zincoxide thin film transistors for flexible display," Electronic Materials Letters, vol. 11, no. 5, pp. 853-861, 2015. DOI: 10.1007/s13391-015-4505-3.
  3. X. C. Ma, J. Zhang, W. Cai, H. Wang, J. Wilson, Q. Wang, Q. Xin, and A. Song, "A sputtered silicon oxide electrolyte for highperformance thin-film transistors," Scientific Reports, vol. 7, article no. 809, 2017. DOI: 10.1038/s41598-017-00939-6.
  4. J. S. Shin, M. J. Kim, J. B. Song, N. G. Jeong, J. T. Kim, and J. Y. Yun, "Fluorine Plasma Corrosion Resistance of Anodic Oxide Film Depending on Electrolyte Temperature," Applied Science and Convergence Technology, vol. 27, no. 1, pp. 9-13, 2018. DOI: 10.5757/ASCT.2018.27.1.9.
  5. S. F. Najam, M. L. P. Tan, and Y. S. Yu, "General SPICE Modeling procedure for double-gate tunnel field-effect transistors," Journal of Information and Communication Convergence Engineering, vol. 14, no. 2, pp. 115-121, 2016. DOI: 10.6109/jicce.2016.14.2.115.
  6. J. Robertson and R. M. Wallace, "High-K materials and metal gates for CMOS applications," Materials Science and Engineering R: Reports, vol. 88, pp. 1-41. 2015. DOI: 10.1016/j.mser.2014.11.001.
  7. T. Oh, "Tunneling condition at high schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor," Materials Research Bulletin, vol. 77, pp. 1-7, 2016. DOI: 10.1016/j.materresbull.2015.11.038.
  8. T. Oh, "Effect of double Schottky barrier in gallium-zinc-oxide thin film," Transactions on Electrical and Electronic Materials, vol. 18, no. 6, pp. 323-329, 2017. DOI: 10.4313/TEEM.2017.18.6.323.
  9. W. Y. Uhm, K. K. Ryu, and S. C. Kim, "Design of a 94-GHz single balanced mixer using planar schottky diodes with a nano-dot structure on a GaAs substrate," Journal of Information and Communication Convergence Engineering, vol. 14, no. 1, pp. 35-39, 2016. DOI: 10.6109/jicce.2016.14.1.035.