Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Comparison of Thermal Energy Harvesting Characteristics of Thermoelectric Thin-Film Modules with Different Thin-Film Leg Diameters

박막레그 직경에 따른 열전박막모듈의 열에너지 하비스팅 특성 비교

  • Kim, Woo-Jun (Department of Materials Science and Engineering, Hongik University) ;
  • Oh, Tae Sung (Department of Materials Science and Engineering, Hongik University)
  • 김우준 (홍익대학교 공과대학 신소재공학과) ;
  • 오태성 (홍익대학교 공과대학 신소재공학과)
  • Received : 2018.11.21
  • Accepted : 2018.12.20
  • Published : 2018.12.31
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Abstract

Thermoelectric thin film modules were fabricated by electroplating p-type $Sb_2Te_3$and n-type $Bi_2Te_3$ thin film legs with the same thickness of $20{\mu}m$ and different diameters of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$, respectively. The output voltage and output power of thin film modules were measured and compared as a function of the leg diameter. The modules processed with thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter exhibited open circuit voltages of 365 mV at ${\Delta}T=36.7K$, 142 mV at ${\Delta}T=37.5K$, and 53 mV at ${\Delta}T=36.1K$, respectively. Maximum output powers of $845{\mu}W$ at ${\Delta}T=36.7K$, $631{\mu}W$ at ${\Delta}T=37.5K$, and $276{\mu}W$ at ${\Delta}T=36.1K$ were obtained for the modules fabricated with the thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter, respectively.

두께가 $20{\mu}m$이며, 직경이 각기 $100{\mu}m$, $300{\mu}m$, $500{\mu}m$인 p형 $Sb_2Te_3$와 n형 $Bi_2Te_3$ 박막레그들을 전기도금하여 열전박막모듈을 형성한 후, 박막레그의 직경에 따른 출력전압과 출력전력을 비교하였다. $100{\mu}m$ 직경 박막레그들로 구성된 모듈은 ${\Delta}T=36.7K$에서 365 mV, $300{\mu}m$ 직경 박막레그들로 형성한 모듈은 ${\Delta}T=37.5K$에서 142 mV, $500{\mu}m$ 직경 박막레그들로 제작한 모듈은 ${\Delta}T=36.1K$에서 53 mV의 open circuit 전압을 나타내었다. $100{\mu}m$ 직경 박막레그 모듈은 ${\Delta}T=36.7K$에서 $845{\mu}W$, $300{\mu}m$ 직경 박막레그 모듈은 ${\Delta}T=37.5K$에서 $631{\mu}W$, $500{\mu}m$ 직경 박막레그 모듈은 ${\Delta}T=36.1K$에서 $276{\mu}W$의 최대출력전력을 나타내었다.

Keywords

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Fig. 1. The layout drawing of the module consisting of the p-type Sb2Te3 and n-type Bi2Te3 legs of 500 μm-diameter.

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Fig. 2. Schematic illustration of the fabrication process for the upper part of a thin film module: (a) sputtering of the Ti/Cu metallization, (b) photoresist (PR) patterning, (c) electrodepositing of the Au, (d) electrodeposition of the Sb2Te3 thin film legs, (e) electrodeposition of the Ni/Sn bonding layer, (f) electrodeposition of the Bi2Te3 thin film legs, (g) electrodeposition of the Ni/Sn bonding layer, and (g) patterning the electrodes.

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Fig. 3. Schematic illustration of the fabrication process for the lower part of a thin film module: (a) sputtering of the Ti/ Cu/Ti metallization, (b) PR patterning electrodepositing the Cu bumps, (c) electrodeposition the Sn bonding layer, and (d) patterning the electrodes.

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Fig. 4. Schematic illustration of a thin film module processed by flip-chip bonding.

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Fig. 5. Scanning electron micrographs of the thin film legs formed in the upper part of a module and the bonding bumps processed in the lower part of the module.

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Fig. 7. Output voltage-temperature difference curves of the thin film modules consisting of the 100-μm, 300-μm, and 500-μm-diameter legs.

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Fig. 8. Output voltage–current curves of the thin film modules processed with the (a) 100-μm, (b) 300-μm, and (c) 500-μm-diameter legs.

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Fig. 9. Module resistance-temperature difference curves of the thin film modules consisting of the 100-μm, 300-μm, and 500-μm-diameter legs.

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Fig. 10. Output power-current curves of the thin film modules processed with the (a) 100-μm, (b) 300-μm, and (c) 500-μm-diameter legs.

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Fig. 11. Maximum output power-temperature difference curves of the thin film modules fabricated with the 100-μm, 300-μm, and 500-μm-diameter legs.

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Fig. 12. Cross-sectional scanning electron micrographs of the thin film module, processed with the 500-μm-diameter legs, showing that the leg was not completely bonded to the Cu bonding pad at the peripheral area.

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Fig. 6. (a) A photo of the thin film module processed with Sb2Te3 and Bi2Te3 legs of 300 μm-diameter and (b) cross-sectional scanning electron micrograph of the module.

Table 1. Thermoelectric properties of the (Ti/Cu/Au)/Bi2Te3 and the (Ti/Cu/Au)/Sb2Te3.

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