열처리공학회지 (Journal of the Korean Society for Heat Treatment)

  • 제31권1호
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  • Pages.6-11
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  • 2018
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  • 1225-1070(pISSN)
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  • 2508-4046(eISSN)
한국열처리공학회 (The Korean Society for Heat Treatment)
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Al-Si 합금의 양극산화거동 및 규소화합물 제어

Anodizing Behavior and Silicides Control in Al-Si Alloy System

  • 박종문 (금오공과대학교 신소재공학부) ;
  • 김주석 (금오공과대학교 신소재공학부) ;
  • 김재권 (금오공과대학교 신소재공학부) ;
  • 김수림 (금오공과대학교 신소재공학부) ;
  • 박노진 (금오공과대학교 신소재공학부) ;
  • 오명훈 (금오공과대학교 신소재공학부)
  • Park, Jong Moon (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT)) ;
  • Kim, Ju Seok (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT)) ;
  • Kim, Jae Kwon (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT)) ;
  • Kim, Su Rim (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT)) ;
  • Park, No Jin (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT)) ;
  • Oh, Myung Hoon (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology (KIT))
  • 투고 : 2017.01.07
  • 심사 : 2018.01.26
  • 발행 : 2018.01.30
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초록

The anodic oxidation behavior of Si-containing aluminum alloy for diecasting was investigated. Especially, the property changes during anodization both on aluminum 1050 and 9 weight percentage silicon containing aluminum (Al-9Si) alloys were analyzed by the static current test. In order to fabricate a uniform anodic oxidation film by effect of Al-Si compound, nitric acid containing hydrofluoric acid had been used as a desmutter for aluminum alloy after alkaline etching. It was found that the level of voltage of Al-9Si alloy during the static current test was almost as double as higher than aluminum 1050 through anodization. By adding hydrofluoric acid in the nitric acid electrolyte, the silicon compound on the surface was removed, and the optimum amount of added hydrofluoric acid could be derived. It was also observed that the size of silicon compound formed on the surface could be refined by heat treatment at $500^{\circ}C$ and followed water quenching.

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