Fig. 1. X-ray diffraction patterns for the sintered specimens of 1Y (a), 1Y2M (b), and 1Y2M-A (c). For (a), YAG is found beside the AlN main phase. For (b) and (c), YAP and MSP are observed along with AlN.
Fig. 2. TEM images for (a) 1Y, (b) the enlarged image of (a), and (c) grain boundary of (a). TEM images for (d) 1Y2M, (e) the enlarged image of (d), and (f) grain boundary of (d). TEM images for (g) 1Y2M-A, (h) the enlarged image of (g), and (i) grain boundary of (g).
Fig. 3. EDX maping images of (a) 1Y (refer to Fig. 2(b)), (b) 1Y2M (refer to Fig. 2(e)) and (c) 1Y2M-A (refer to Fig. 2(g)).
Fig. 5. Complex impedance spectrum spectra of 1Y ((a), (b)), 1Y2M ((c), (d)), and 1Y2M-A ((e), (f)).
Fig. 6. Grain and grain boundary conductivities with respect to temperature for 1Y, 1Y2M, and 1Y2M-A.
Fig. 4. (a) Temperature and time dependences of the electronic resistivity for 1Y2M-A at 100 V/mm (red: RT, black: 100℃, blue: 200℃, Cyan: 300℃, pink: 400℃, green: 500℃). (b) Electronic conductivity with respect to temperature for 1Y, 1Y2M and 1Y2M-A at 100 V/mm.
Table 1 Subscript (m = g, gb) corresponds to high frequency (grain) and low frequency (grain boundary) contributions in Rm, Qm, Cm, εm, respectively. R: resistance, Q: pseudo-capacitance, n: empirical CPE (constant phase element) parameter. Capacitance (C) and permittivity (ε) values were calculated by equation, C = (Q*R)1/n/R
참고문헌
- R. Atkinson, "A simple theory of the Johnsen-Rahbek effect", Brit. J. Appl. Phys. 2 (1969) 325.
- T. Watnabe, T. Kitabayashi and C. Nakayama, "Electrostatic force and absorption current of alumina electrostatic chuck", Jpn. J. Appl. Phys. 31 (1992) 2145. https://doi.org/10.1143/JJAP.31.2145
- T. Watnabe, T. Kitabayashi and C. Nakayama, "Relationship between electrical resistivity and electrostatic force of alumina electrostatic chuck", Jpn. J. Appl. Phys. 32 (1993) 864. https://doi.org/10.1143/JJAP.32.864
- J. Elp, P.T.M. Giesen and A.M.M. de Groof, "Low-thermal expansion electrostatic chuck materials and clamp mechanisms in vacuum and air", Microelectronic Eng. 73 (2004) 941.
- G. Kalkowski, S. Risse, G. Harnisch and V. Guyenot, "Electrostatic chucks for lithography applications", Microelectronic Eng. 57 (2001) 219
- G. Kalkowski, S. Risse and V. Guyenot, "Electrostatic chuck behavior at ambient conditions", Microelectronic Eng. 61 (2002) 357
- G. Kalkowski, S. Risse, S. Muller and G. Harnisch, "Electrostatic chucks for EUV masks", Microelectronic Eng. 83 (2006) 714. https://doi.org/10.1016/j.mee.2006.01.049
- J.C. Bang, "Fabrication of borosilicate glass-coated electrostatic chucks", J. Microelectronics & Packaging Soc. 9 (2002) 49.
- K. Aikawa, M. Watanabe, A. Jindo, Y. Katsuda, Y. Sato and Y. Isoda, "Electrostatic chuck", US Patent US 13/869,285 (April 24, 2013).
- J.-U. Lee, W.-J. Lee and S.-M. Lee, "Electrical behavior of aluminum nitride ceramics sintered with yttrium oxide and titanium oxide", J. Kor. Ceram. Soc. 53 (2016) 635. https://doi.org/10.4191/kcers.2016.53.6.635
- C.M. Whang, W.J. Jeong and S.W. Choi, "Synthesis of aluminum nitride powder from aluminum hydroxide by carbothermal reduction-nitridation", J. Kor. Ceram. Soc. 31 (1994) 893.
-
W.S. Jung, "Synthesis of aluminum nitride powers and whiskers from a (
$NH_{4}$ )[Al(edta)].$2H_{2}O$ complex under a flow of nitrogen", J. Kor. Ceram. Soc. 39 (2002) 272. https://doi.org/10.4191/KCERS.2002.39.3.272 - S.K. Yang and J.B. Kang, "Synthesis of aluminum nitride whisker by carbothermal reaction I. Effect of fluoride addition", J. Kor. Ceram. Soc. 41 (2004) 118. https://doi.org/10.4191/KCERS.2004.41.2.118
- Y. Imanaka, Y. Suzuki, T. Suzuki, K. Hirao, T. Tsuchiya and H. Nagata, "Advanced Ceramic Technologies and Products", (The Ceramic Society of Japan, 2012).
- A.V. Virkar, T.B. Jackson and R.A. Cutler, "Thermodynamic and kinetic effects of oxygen removal on the thermal conductivity of aluminum nitride", J. Amer. Ceram. Soc. 72 (1989) 2031. https://doi.org/10.1111/j.1151-2916.1989.tb06027.x
- K. Watari, H.J. Hwang, M. Toriyama and S. Kanzaki, "Effective sintering aids for low-temperature sintering of AlN ceramics", J. Mater. Res. 14 (1999) 1409. https://doi.org/10.1557/JMR.1999.0191
- G.A. Slack, "Nonmetallic crystals with high thermal conductivity", J. Phy. Chem. Solids 34 (1973) 321. https://doi.org/10.1016/0022-3697(73)90092-9
- R.W. Francis and W.L. Worrell, "High temperature electrical conductivity of aluminum nitride", J. Electrochem. Soc. 123 (1976) 430. https://doi.org/10.1149/1.2132844
-
M. Yahagi and K.S. Goto, "Ionic conductivity of AlN containing
$Y_2O_3$ or$Al_2O_3$ at 1173-1773 K", J. Jpn. Inst. Metal 47 (1983) 419. https://doi.org/10.2320/jinstmet1952.47.5_419 - M. Zulfequar and A. Kumar, "Electrical conductivity and dielectric behavior of hot-pressed AlN", Adv. Ceram. Mater. 3 (1988) 332. https://doi.org/10.1111/j.1551-2916.1988.tb00229.x
- S.A. Jang and G.M. Choi, "Electrical conduction in aluminum nitride", J. Amer. Ceram. Soc. 76 (1993) 957. https://doi.org/10.1111/j.1151-2916.1993.tb05319.x
- H.-S. Kim, J.-M. Chae, Y.-S. Oh, H.-T. Kim, K.-B. Shim and S.-M. Lee, "Effects of carbothermal reduction on the thermal and electrical conductivities of aluminum nitride ceramics", Ceram. Inter. 36 (2010) 2039. https://doi.org/10.1016/j.ceramint.2010.04.001
-
J.-W. Lee, W.-J. Lee, K.-B. Shim and H.-T. Kim, "Effects of sintering conditions on the electrical conductivity of 1 wt%
$Y_2O_3$ -doped AlN ceramics", J. Kor. Ceram. Soc. 44 (2007) 116. https://doi.org/10.4191/KCERS.2007.44.2.116 - S.O. Kasap, "Principles of Electronic materials Materials and Devices", (McGrowMcGraw-Hill, New York, 2006) Ch. 7.3.
-
D. Yu, E. Lee, S.-M. Lee and J.-Y. Kim, "High temperature ionic and electronic resistivity of MgO and
$Ta_2O_5$ doped aluminum nitride", J. Kor. Phys. Soc. 72 (2018) 129. https://doi.org/10.3938/jkps.72.129