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Formation of Ni / Cu Electrode for Crystalline Si Solar Cell Using Light Induced Electrode Plating

광유도 전해 도금법을 이용한 결정질 실리콘 태양전지용 Ni/Cu 전극 형성

  • Hong, Hyekwon (Department of IT Convergence, Korea National University of Transportation) ;
  • Park, Jeongeun (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Cho, Youngho (Department of IT Convergence, Korea National University of Transportation) ;
  • Kim, Dongsik (Department of IT Convergence, Korea National University of Transportation) ;
  • Lim, Donggun (Department of IT Convergence, Korea National University of Transportation) ;
  • Song, Woochang (Department of Electrical Engineering, Kangwon National University)
  • 홍혜권 (한국교통대학교 정보기술융합학과) ;
  • 박정은 (한국교통대학교 전자공학과) ;
  • 조영호 (한국교통대학교 정보기술융합학과) ;
  • 김동식 (한국교통대학교 정보기술융합학과) ;
  • 임동건 (한국교통대학교 정보기술융합학과) ;
  • 송우창 (강원대학교 전기공학과)
  • Received : 2018.11.08
  • Accepted : 2018.11.23
  • Published : 2018.11.30

Abstract

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

Keywords

References

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