DC 스퍼터링을 이용한 소다라임 유리 기판상에 2차원 황화텅스텐 박막 형성 공정

DC Sputtering Process of 2-Dimensional Tungsten Disulfide Thin Films on Soda-Lime Glass Substrates

  • 마상민 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과)
  • Ma, Sang Min (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
  • 투고 : 2018.08.14
  • 심사 : 2018.09.19
  • 발행 : 2018.09.30

초록

Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.

키워드

참고문헌

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