Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Effect of Surface Passivation on Breakdown Voltages of 4H-SiC Schottky Barrier Diodes

  • Kang, In Ho (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Na, Moon Kyong (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Seok, Ogyun (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Moon, Jeong Hyun (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Kim, H.W. (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Kim, Sang Cheol (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Bahng, Wook (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Kim, Nam Kyun (Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI)) ;
  • Park, Him-Chan (Department of Electrical Engineering, Kyungnam University) ;
  • Yang, Chang Heon (R&D team, Maple Semiconductors. Inc.)
  • Received : 2017.05.25
  • Accepted : 2017.07.18
  • Published : 2017.11.30
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Abstract

In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1) thermal oxide with a post oxidation annealing, or no oxide by removing the oxide, and (2) plasma-enhanced chemical vapor deposited (PECVD) oxide, phosphosilicate glass (PSG), or polyimide (PI). The results show that the SBD having a sacrificial oxide as $1^{st}$ passivation layer and a PI as $2^{nd}$ passivation layer exhibited lower leakage current by a factor of more than 2 for the reverse bias above 1000 V than the others and its breakdown voltage ($V_{BR}$) was 2254 V, which corresponds to 93% $V_{BR}$ of a parallel-plane ideal device.

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Acknowledgement

Grant : Development of low-loss power module for controlling high-efficiency motor

Supported by : KERI

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