Fabrication and Electrical Characterization of Planar Lighting Devices with Cs₃Sb Photocathode Emitters

Non-vacuum process technology was used to produce $Cs_3Sb$ photocathodes on substrates, and insitu panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, $Cs_3Sb$ photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the $Cs_3Sb$ flat emitters.