Advances in nano research

Techno-Press (테크노프레스)
권호 표지
DOI QR코드

DOI QR Code

ZnO thin films with Cu, Ga and Ag dopants prepared by ZnS oxidation in different ambient

  • Received : 2016.11.15
  • Accepted : 2017.08.01
  • Published : 2017.09.25
⟨ Previous Next ⟩

Abstract

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

Keywords

Acknowledgement

Supported by : Instituto Politecnico Nacional

References

  1. Behera, D. and Acharaya, B.S. (2008), "Nano-star formation in Al-doped ZnO thin film deposited by dipdry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy", J. Luminescence, 128(10), 1577-1586. https://doi.org/10.1016/j.jlumin.2008.03.006
  2. Buyanova, I.A., Wang, X.J., Wang, W.M., Tu, C.W. and Chen, W.M. (2009), "Effects of Ga doping on optical and structural properties of ZnO epilayers", Superlatt. Microstruct., 45(4-5), 413-420. https://doi.org/10.1016/j.spmi.2008.10.039
  3. Ding, J.J., Ma, S.Y., Chen, H.X., Shi, X.F., Zhou, T.T. and Mao, L.M. (2009), "Influence of Al-doping on the structural and optical properties of ZnO films", Physica B: Condensed Matter, 404(16), 2439-2443. https://doi.org/10.1016/j.physb.2009.05.006
  4. Hsiao, W.T., Tseng, S.F., Chung, Ch.K., Chiang, D., Huang, K.Ch., Lin, K.M., Li, L.Y. and Chen, M.F. (2015), "Effect on structural, optical and electrical properties of aluminum-doped zinc oxide films using diode laser annealing", Optics & Laser Technology, 68, 41-47. https://doi.org/10.1016/j.optlastec.2014.11.009
  5. Janotti, A. and Van de Walle, Ch.G. (2009), "Fundamentals of zinc oxide as a semiconductor", Reports Prog. Phys., 72(12), 126501 (29 pp). https://doi.org/10.1088/0034-4885/72/12/126501
  6. Jayatissa, A.H. (2003), "Preparation of gallium-doped ZnO films by oxidized ZnS films", Semicond. Sci. Technol., 18(6), L27-L30. https://doi.org/10.1088/0268-1242/18/6/101
  7. Karak, N., Samanta, P.K. and Kundu, T.K. (2013), "Green photoluminescence from highly oriented ZnO thin film for photovoltaic application", Optik, 124(23), 6227-6230. https://doi.org/10.1016/j.ijleo.2013.05.019
  8. Kim, D.H., Jeon, H., Kim, G., Hwangboe, S., Verma, V.P., Choi, W. and Jeon, M. (2008), "Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature", Optics Commun., 281(8), 2120-2125. https://doi.org/10.1016/j.optcom.2007.12.015
  9. Klingshirn, C., Fallert, J., Zhou, H., Sartor, J., Thiele, C., Maier-Flaig, F., Schneider, D. and Kalt, H. (2010), "65 years of ZnO research - old and very recent results", Phys. Status Solidi B, 247(6), 1448-1452. https://doi.org/10.1002/pssb.200983268
  10. Kryshtab, T., Khomchenko, V.S., Khachatryan, V.B., Roshchina, N.N., Andraca-Adame, J.A., Lytvyn, O.S. and Kushnirenko, V.I. (2007), "Effect of doping on properties of Zno:Cu and Zno:Ag thin films", J. Mater. Sci.: Mater. Electron., 18(11), 1115-1118. https://doi.org/10.1007/s10854-007-9256-y
  11. Kryshtab, T., Khomchenko, V.S., Andraca-Adame, J.A., Savin, A.K., Kryvko, A., Juarez, G. and Pena-Sierra, R. (2009), "Luminescence and structure of ZnO-ZnS thin films prepared by oxidation of ZnS films in air and water vapor", J. Luminescence, 129(12), 1677-1681. https://doi.org/10.1016/j.jlumin.2009.04.069
  12. Studenikin, S.A., Golego, N. and Cocivera, M. (1998), "Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis", J. Appl. Phys., 84(4), 2287-2294. https://doi.org/10.1063/1.368295
  13. Wang, X.S., Zhai, J.W., Zhang, L.Y. and Yao, X. (1999), "Structural and optical characterization of $Bi_4Ti_3O_{12}$ thin films prepared by metallorganic solution deposition technique", Infrared Phys. & Technol., 40(1), 55-60. https://doi.org/10.1016/S1350-4495(98)00048-6
  14. Wang, Y.G., Lau, S.P., Lee, H.W., Yu, S.F., Tay, B.K., Zhang, X.H. and Hng, H.H. (2003), "Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air", J. Appl. Phys., 94(1), 354-358. https://doi.org/10.1063/1.1577819
  15. Warren, B.E. (1990), X-Ray Diffraction, Dover publications, INC, New York, NY, USA.
  16. Xue, H., Xu, X.L., Chen, Y., Zhang, G.H. and Ma, S.Y. (2008), "Influence of Ag-doping on the optical properties of ZnO films", Appl. Surface Sci., 255(5), 1806-1810. https://doi.org/10.1016/j.apsusc.2008.06.021
  17. Yang, S. and Zhang, Y. (2013), "Structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method", J. Magnet. Magnet. Mater., 334, 52-58. https://doi.org/10.1016/j.jmmm.2013.01.026