Advances in nano research

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Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate

  • Simonyan, Arpine K. (Department of Physics of Semiconductors and Microelectronics, Yerevan State University) ;
  • Gambaryan, Karen M. (Department of Physics of Semiconductors and Microelectronics, Yerevan State University) ;
  • Aroutiounian, Vladimir M. (Department of Physics of Semiconductors and Microelectronics, Yerevan State University)
  • Received : 2015.11.09
  • Accepted : 2017.04.14
  • Published : 2017.12.25
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Abstract

The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

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References

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